Numerical study on stress control of silicon ingot for photovoltaic applications

Ιn medium voltage cables, the stress control layers play an important part in controlling the electric field distribution around the medium voltage underground cable terminations. Underground cable accessories, used in medium voltage cable systems, need a stress control tube in order to maintain and control the insulation level which is designed for long life times. The term “electrical stress control” refers to the cable termination analysis of optimizing the electrical stress in the area of insulation shield cutback to reduce the electrical field concentration at this point in order to reduce breakdown in the cable insulation. This paper presents the effect of some materials of different relative permittivities and geometrical regulation with the curved shape stress relief cones on the electric field distribution of cable termination. The optimization was done by comparing the results of eight materials used. Also, the effect of the change in the thickness of the stress control tube is presented. The modeling design is very important for engineers to find the optimal solution of terminator design of medium voltage cables. This paper also describes the evolution of stress control systems and their benefits. A developed program using Finite Element Method (FEM) has calculated a numerical study to the stress control layering electric field distribution.

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NUMERICAL STUDY OF ELECTRIC FIELD DISTRIBUTION IN HIGH-VOLTAGE CABLE TERMINATION WITH STRESS CONTROL CONE

Tekhnichna Elektrodynamika ◽

10.15407/techned2017.01.017 ◽

2017 ◽

Vol 2017 (1) ◽

pp. 17-22 ◽

Cited By ~ 1

Author(s):

I.M. Kucheriava ◽

Keyword(s):

Electric Field ◽

Field Distribution ◽

High Voltage ◽

Electric Field Distribution ◽

Numerical Study ◽

Stress Control

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Formation of high temperature phase in flash-evaporated SnSe films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176629 ◽

1990 ◽

Vol 48 (4) ◽

pp. 698-699

Author(s):

J.P.S. Hanjra

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Energy Gap ◽

Dominant Role ◽

Fine Powder ◽

High Temperature Phase ◽

Temperature Phase ◽

Water Mixture ◽

Flash Evaporation ◽

Photovoltaic Applications

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.

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