scholarly journals Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr2 precursors

2021 ◽  
pp. 126242
Author(s):  
K. Ben Saddik ◽  
A.F. Braña ◽  
N. López ◽  
B.J. García ◽  
S. Fernández-Garrido
Keyword(s):  
Chemical Beam Epitaxy ◽  
Carbon Doped

Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistor grown by chemical beam epitaxy

1993 ◽  
Vol 29 (21) ◽  
pp. 1893 ◽  
Author(s):  
J.-I. Song ◽  
W.-P. Hong ◽  
C.J. Palmstro̸m ◽  
J.R. Hayes ◽  
K.B. Chough ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Microwave Characteristics

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

1992 ◽  
Vol 28 (14) ◽  
pp. 1344 ◽  
Author(s):  
J.L. Benchimol ◽  
F. Alexandre ◽  
C. Dubon-Chevallier ◽  
F. Héliot ◽  
R. Bourguiga ◽  
...  
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Very High

Growth and diffusion study of carbon doped GaAs superlattice grown by chemical beam epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 1051-1052
Author(s):  
T.H. Chiu ◽  
J.E. Cunningham ◽  
J.A. Ditzenberger ◽  
W.Y. Jan
Keyword(s):  
Chemical Beam Epitaxy ◽  
Diffusion Study ◽  
Carbon Doped ◽  
And Diffusion

Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources

1995 ◽  
Vol 150 ◽  
pp. 562-567 ◽  
Author(s):  
N.Y. Li ◽  
Y.M. Hsin ◽  
H.K. Dong ◽  
T. Nakamura ◽  
P.M. Asbeck ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Carbon Doped

Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
N. Y. Li ◽  
C. W. Tu
Keyword(s):  
Heterojunction Bipolar Transistor ◽  
Device Performance ◽  
Chemical Beam Epitaxy ◽  
Alternative Source ◽  
Group V ◽  
Selective Area Epitaxy ◽  
Carbon Doped ◽  
Selective Area ◽  
Etching Effect

AbstractIn this study, we shall first report selective-area epitaxy (SAE) of GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic (TDMAAs), a safer alternative source to arsine (AsH3), as the group V source. With triethylgallium (TEGa) and TDMAAs, true selectivity of GaAs can be achieved at a growth temperature of 470°C, which is much lower than the 600°C in the case of using TEGa and arsenic (As4) or AsH3. Secondly, we apply SAE of carbon-doped AIGaAs/GaAs to a heterojunction bipolar transistor (HBT) with a regrown external base, which exhibits a better device performance. Finally, the etching effect and the etched/regrown interface of GaAs using TDMAAs will be discussed.

Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring

1996 ◽  
Vol 164 (1-4) ◽  
pp. 371-376 ◽  
Author(s):  
T.B. Joyce ◽  
S.P. Westwater ◽  
P.J. Goodhew ◽  
R.E. Pritchard
Keyword(s):  
In Situ Monitoring ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped

High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy

1993 ◽  
Vol 29 (8) ◽  
pp. 666 ◽  
Author(s):  
J.-I. Song ◽  
C.J. Palmstrom ◽  
B.P. Van der Gaag ◽  
W.-P. Hong ◽  
J.R. Hayes ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Bipolar Transistors ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped
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