Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors with a very low 1/f noise corner frequency of 108 kHz grown by chemical beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 221-224 ◽  
Author(s):  
Y.K. Chen ◽  
R. Kapre ◽  
W.T. Tsang ◽  
A. Tate ◽  
D.A. Humphrey ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Corner Frequency ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Double Heterojunction

InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

1993 ◽  
Vol 29 (10) ◽  
pp. 850-851 ◽  
Author(s):  
R.C. Gee ◽  
P.M. Asbeck ◽  
C.L. Lin ◽  
P.D. Kirchner ◽  
J.M. Woodall ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Double Heterojunction

InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

1992 ◽  
Vol 282 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
R. Esagui
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Gas Source ◽  
High Injection ◽  
Heterojunction Devices ◽  
Double Heterojunction ◽  
Metal Organic

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm−3. Ideality factors (<1.1)were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double PHBT) heterojunction devices. Vceo's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.

High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy

1993 ◽  
Vol 29 (8) ◽  
pp. 666 ◽  
Author(s):  
J.-I. Song ◽  
C.J. Palmstrom ◽  
B.P. Van der Gaag ◽  
W.-P. Hong ◽  
J.R. Hayes ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Bipolar Transistors ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped
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