High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy

Electronics Letters ◽

10.1049/el:19930446 ◽

1993 ◽

Vol 29 (8) ◽

pp. 666 ◽

Author(s):

J.-I. Song ◽

C.J. Palmstrom ◽

B.P. Van der Gaag ◽

W.-P. Hong ◽

J.R. Hayes ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Performance ◽

Bipolar Transistors ◽

Chemical Beam Epitaxy ◽

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Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors with a very low 1/f noise corner frequency of 108 kHz grown by chemical beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90413-8 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 221-224 ◽

Author(s):

Y.K. Chen ◽

R. Kapre ◽

W.T. Tsang ◽

A. Tate ◽

D.A. Humphrey ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Corner Frequency ◽

Chemical Beam Epitaxy ◽

Carbon Doped ◽

Double Heterojunction

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High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base

IEEE Electron Device Letters ◽

10.1109/55.82083 ◽

1991 ◽

Vol 12 (6) ◽

pp. 347-349 ◽

Author(s):

G.-W. Wang ◽

R.L. Pierson ◽

P.M. Asbeck ◽

K.-C. Wang ◽

N.-L. Wang ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Performance ◽

Bipolar Transistors ◽

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High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588789 ◽

1996 ◽

Vol 14 (6) ◽

pp. 3509 ◽

Author(s):

R. Driad

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Stability ◽

Atomic Layer ◽

Bipolar Transistors ◽

Chemical Beam Epitaxy ◽

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Potentially high-performance carbon-doped GaInP/GaAs heterojunction bipolar transistors with different compositional base gradings

Electronics Letters ◽

10.1049/el:19940386 ◽

1994 ◽

Vol 30 (7) ◽

pp. 605-606 ◽

Author(s):

J.-I. Song ◽

K.B. Chough ◽

W.-P. Hong ◽

C. Caneau

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Performance ◽

Bipolar Transistors ◽

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Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Materials Science and Engineering B ◽

10.1016/0921-5107(94)90059-0 ◽

1994 ◽

Vol 28 (1-3) ◽

pp. 257-260 ◽

Author(s):

T. Ishibashi ◽

H. Sugahara ◽

H. Ito ◽

T. Nittono ◽

K. Nagata ◽

...

Keyword(s):

High Temperature ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

Stress Tests ◽

Carbon Doped ◽

Temperature Bias ◽

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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1866 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1866-1868 ◽

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Kazuhiro Mochizuki ◽

Tohru Oka ◽

Tomonori Tanoue

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

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Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711687 ◽

1997 ◽

Author(s):

J.-W. Park ◽

D. Pavlidis ◽

S. Mohammadi ◽

C. Dua ◽

J.C. Garcia

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Chemical Beam Epitaxy ◽

High Frequency Performance

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Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.3343 ◽

1996 ◽

Vol 35 (Part 1, No. 6A) ◽

pp. 3343-3349 ◽

Author(s):

Hiroshi Ito ◽

Shoji Yamahata ◽

Naoteru Shigekawa ◽

Kenji Kurishima ◽

Yutaka Matsuoka

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Carbon Doped ◽

Metalorganic Chemical

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High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190678 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1564 ◽

Author(s):

Bing-Ruey Wu ◽

Benjamin F. Chu-Kung ◽

Milton Feng ◽

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaP

Applied Physics Letters ◽

10.1063/1.107678 ◽

1992 ◽

Vol 61 (9) ◽

pp. 1092-1094 ◽

Author(s):

C. R. Abernathy ◽

F. Ren ◽

P. W. Wisk ◽

S. J. Pearton ◽

R. Esagui

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Carbon Doped ◽

Improved Performance

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