High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy
1996 ◽
Vol 14
(6)
◽
pp. 3509
◽
1994 ◽
Vol 136
(1-4)
◽
pp. 221-224
◽
1994 ◽
Vol 28
(1-3)
◽
pp. 257-260
◽
Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 3B)
◽
pp. 1866-1868
◽
1996 ◽
Vol 35
(Part 1, No. 6A)
◽
pp. 3343-3349
◽
DC, RF, and noise characteristics of carbon-doped base InP/InGaAs heterojunction bipolar transistors
1994 ◽
Vol 41
(1)
◽
pp. 19-25
◽