High recoverable energy storage density in (1-x)Bi0.5(Na0.8K0.2)0.5TiO3-xSrZrO3 thin films prepared by a sol-gel method

2018 ◽  
Vol 38 (14) ◽  
pp. 4640-4645 ◽  
Author(s):  
Pan Chen ◽  
Shuanghao Wu ◽  
Peng Li ◽  
Jiwei Zhai ◽  
Bo Shen
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Sol Gel ◽  
Energy Storage Density ◽  
Storage Density ◽  
Gel Method ◽  
Sol Gel Method ◽  
Recoverable Energy

scholarly journals Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2141
Author(s):  
Jie Zhang ◽  
Yuanyuan Zhang ◽  
Qianqian Chen ◽  
Xuefeng Chen ◽  
Genshui Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Leakage Current ◽  
Multilayer Structure ◽  
Breakdown Strength ◽  
Layer Structure ◽  
Sol Gel ◽  
Electric Breakdown ◽  
Energy Storage Density ◽  
Storage Density

PbZr0.35Ti0.65O3 (PZT), PbZrO3 (PZO), and PZT/PZO ferroelectric/antiferroelectric multilayer films were prepared on a Pt/Ti/SiO2/Si substrate using the sol–gel method. Microstructures and physical properties such as the polarization behaviors, leakage current, dielectric features, and energy-storage characteristics of the three films were systematically explored. All electric field-dependent phase transitions, from sharp to diffused, can be tuned by layer structure, indicated by the polarization, shift current, and dielectric properties. The leakage current behaviors suggested that the layer structure could modulate the current mechanism, including space-charge-limited bulk conduction for single layer films and Schottky emission for multilayer thin films. The electric breakdown strength of a PZT/PZO multilayer structure can be further enhanced to 1760 kV/cm, which is higher than PZT (1162 kV/cm) and PZO (1373 kV/cm) films. A recoverable energy-storage density of 21.1 J/cm3 was received in PZT/PZO multilayers due to its high electric breakdown strength. Our results demonstrate that a multilayer structure is an effective method for enhancing energy-storage capacitors.

Fe2O3 - TiO2 THIN FILMS PREPARED BY SOL-GEL METHOD

2011 ◽  
Vol 10 (2) ◽  
pp. 187-192 ◽  
Author(s):  
Ramona-Crina Suciu ◽  
Marcela Corina Rosu ◽  
Teofil Danut Silipas ◽  
Emil Indrea ◽  
Violeta Popescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
Sol Gel Method
Sign in / Sign up

Export Citation Format

Share Document