Design, synthesis, microstructure and electrical properties of thermal-strained PZT films

2021 ◽  
Author(s):  
Xiaokuo Er ◽  
Fei Shao ◽  
Sizhe Diao ◽  
Hongliang Wang ◽  
Qinghua Ma ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Design Synthesis ◽  
Pzt Films

Electrical properties of ferroelectric PZT films irradiated by oxygen ions

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-265-Pr9-268
Author(s):  
L. Zheng ◽  
C. Lin ◽  
K. V. Rao
Keyword(s):  
Electrical Properties ◽  
Oxygen Ions ◽  
Pzt Films

Effect of Growth Conditions on Structural and Electrical Properties of Pb(ZrxTi1−x)O3 layers grown by peroxide MBE

2007 ◽  
Vol 1034 ◽  
Author(s):  
Natalia Izyumskaya ◽  
V. Avrutin ◽  
X. Gu ◽  
B. Xiao ◽  
S. Chevtchenko ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Phase Composition ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Field Measurements ◽  
Growth Conditions ◽  
Second Phase ◽  
Conductive Atomic Force Microscopy ◽  
Structural And Electrical Properties ◽  
Pzt Films

AbstractPb(ZrxTi1−x)O3 (PZT) films were grown by molecular beam epitaxy using hydrogen peroxide as a source of reactive oxygen. Phase composition as well as structural and electrical properties of the films were studied by x-ray diffractometry, scanning and transmission electron microscopy, conductive atomic force microscopy, and electrical (I-V and polarization-field) measurements. The hydrogen peroxide pressure was found to control the phase composition of the films. Excess peroxide leads to PbO inclusions in PZT layers, whereas deficiency results in the TiO2 or the ZrO2 phase. The second-phase inclusions can be responsible for high leakage current in the films. Precise control over the peroxide pressure is imperative for single-phase PZT films with good ferroelectric properties.

Control of Grain Size of Pb(Zr,Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties

1998 ◽  
Vol 541 ◽  
Author(s):  
H. Fujisawa ◽  
S. Nakashima ◽  
M. Shimizu ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Dielectric Constants ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractThe grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.

Design, Synthesis, Structural and Textural Characterization, and Electrical Properties of Mesoporous Thin Films Made of Rare Earth Oxide Binaries

2009 ◽  
Vol 21 (11) ◽  
pp. 2184-2192 ◽  
Author(s):  
Jessie Hierso ◽  
Ozlem Sel ◽  
Armelle Ringuede ◽  
Christel Laberty-Robert ◽  
Luc Bianchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Rare Earth Oxide ◽  
Design Synthesis ◽  
Textural Characterization ◽  
Mesoporous Thin Films

Electrical properties of PZT films and Mg2TiO4buffer layer for mfmis fet

2001 ◽  
Vol 260 (1) ◽  
pp. 81-86 ◽  
Author(s):  
Jung-Hoon Yeom ◽  
Choon-Ho Lee
Keyword(s):  
Electrical Properties ◽  
Pzt Films

Electrical properties of Sb-doped PZT films deposited by d.c. reactive sputtering using multi-targets

1998 ◽  
Vol 37 (3) ◽  
pp. 119-127 ◽  
Author(s):  
Won-Youl Choi ◽  
Joon-Hyung Ahn ◽  
Won-Jae Lee ◽  
Ho-Gi Kim
Keyword(s):  
Electrical Properties ◽  
Reactive Sputtering ◽  
Pzt Films
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