Effect of Growth Conditions on Structural and Electrical Properties of Pb(ZrxTi1−x)O3 layers grown by peroxide MBE

2007 ◽  
Vol 1034 ◽  
Author(s):  
Natalia Izyumskaya ◽  
V. Avrutin ◽  
X. Gu ◽  
B. Xiao ◽  
S. Chevtchenko ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Phase Composition ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Field Measurements ◽  
Growth Conditions ◽  
Second Phase ◽  
Conductive Atomic Force Microscopy ◽  
Structural And Electrical Properties ◽  
Pzt Films

AbstractPb(ZrxTi1−x)O3 (PZT) films were grown by molecular beam epitaxy using hydrogen peroxide as a source of reactive oxygen. Phase composition as well as structural and electrical properties of the films were studied by x-ray diffractometry, scanning and transmission electron microscopy, conductive atomic force microscopy, and electrical (I-V and polarization-field) measurements. The hydrogen peroxide pressure was found to control the phase composition of the films. Excess peroxide leads to PbO inclusions in PZT layers, whereas deficiency results in the TiO2 or the ZrO2 phase. The second-phase inclusions can be responsible for high leakage current in the films. Precise control over the peroxide pressure is imperative for single-phase PZT films with good ferroelectric properties.

Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
T. Ami ◽  
K. Hironaka ◽  
C. Isobel ◽  
N. Nagel ◽  
M. Sugiyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Type Structure ◽  
Structural And Electrical Properties ◽  
Fluorite Type ◽  
Deposited Films ◽  
Flowing Oxygen

ABSTRACTFerroelectric Bi2 SrTa2 O9 thin films were successfully prepared by liquid delivery MOCVD, and structural and electrical properties were investigated. As-deposited films showed sharp distinct peaks, which were indexed assuming a fluorite-type structure. These precursors were transformed to bismuth-layered structures by annealing at 800 °C in flowing oxygen. Reasonable ferroelectric properties were observed in a film with 170 nm-thickness. Remanent polarization and coercive field were estimated to be 5.2 μC/cm2 and 52 kV/cm, respectively, at 5V.

Electrical Properties of Modified BNT Based Lead-Free Ceramics

2016 ◽  
Vol 872 ◽  
pp. 87-91
Author(s):  
Supalak Manotham ◽  
Tawee Tunkasiri ◽  
Pharatree Jaita ◽  
Pichitchai Butnoi ◽  
Denis Russell Sweatman ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Electrical Properties ◽  
Sintering Temperature ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lead Free Ceramics

The properties of modified Bi0.5Na0.5TiO3 (BNT) based lead-free ceramics were investigated. The BNT-based ceramics were prepared by a solid-state mixed oxide method Phase formation was determined by X-ray diffraction technique (XRD). The X-ray diffraction analysis of the ceramics suggested that all samples exhibited a perovskite structure without second phase. The value of dielectric constant increased with increasing in sintering temperature. Moreover, high sintering temperatures could improve ferroelectric properties of BNT base lead-free ceramics.

ELECTRICAL PROPERTIES OF HETEROLAYERED BaTiO3/(Bi1/2Na1/2)TiO3 THICK FILMS

2009 ◽  
Vol 23 (31n32) ◽  
pp. 3785-3791
Author(s):  
SUNG-PILL NAM ◽  
HYUN-JI NOH ◽  
SUNG-GAP LEE ◽  
SEON-GI BAE ◽  
YOUNG-HIE LEE
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Screen Printing ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Thick Films ◽  
Rhombohedral Structure ◽  
Structural And Electrical Properties ◽  
Printing Techniques

The heterolayered BT/BNT thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt . Their structure and ferroelectric properties were investigated with the heterolayered tetragonal/rhombohedral structure composed of the BT and the BNT thick films. The structural and electrical properties of the heterolayered BT/BNT thick films were studied. The dielectric properties such as dielectric constant, loss and remanent polarization of the heterolayered BT/BNT thick films were superior to those of single composition BNT, and those values for the heterolayered BT/BNT thick films were 1455, 0.025 and 12.63 µC/cm2.

Growth and Electrical Properties of PbMg0.047Nb0.095Zr0.416Ti0.442O3 Films Fabricated by Metalorganic Decomposition

2009 ◽  
Vol 421-422 ◽  
pp. 148-152
Author(s):  
Yuki Hasegawa ◽  
Masafumi Kobune ◽  
Yusuke Daiko ◽  
Atsushi Mineshige ◽  
Tetsuo Yazawa ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Film Thickness ◽  
Ferroelectric Properties ◽  
Thick Films ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Structural And Electrical Properties ◽  
Transmission Electron Microscope Micrographs ◽  
Metalorganic Decomposition ◽  
Highly Uniform

On the basis of experimental data on the piezoelectric pinpoint composition of ceramics of the ternary system Pb(Mg1/3Nb2/3)O3-PbZrO3-PbTiO3 (PMNZT), which we investigated in our previous report, epitaxial PbMg0.047Nb0.095Zr0.416Ti0.442O3 thick films with thicknesses ranging from 0.4 to 1.9 m were fabricated on Pt(100)/MgO(100) substrates by metalorganic decomposition. The film- thickness dependence on the structural and electrical properties (dielectric, piezoelectric and ferroelectric properties) was investigated. All PMNZT films exhibited a highly uniform (001) orientation, regardless of the film thickness. The cross-sectional transmission electron microscope micrographs and all the physical data suggest that high-density PMNZT thick films with a thickness  1.0 m can be expected to function as highly electrically insulating capacitors with high potential for piezo- and ferroelectric applications.

Structural and Ferroelectric Properties of SrBi2Ta2O9 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Kazushi Amanuma ◽  
Takashi Hase ◽  
Yoicht Mtyasaka
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Structural Change ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Sims Analysis ◽  
Film Preparation

ABSTRACTStructural and electrical properties were investigated for chemically prepared SrBi2Ta2O9(SBT) thin films on Pt/Ti/SiO2/Si substrates. Good ferroelectric properties were obtained with a Pt top electrode: Pr=10.0μC/cm2 and Ec-34kV/cm. Au top electrodes resulted in smaller Pr. However, no fatigue was observed up to 109 switching cycles regardless of the top electrode material. Grains were spherical, not columnar, and the average grain size was 200nm. A marked structural change took place in the bottom Pt/Ti electrode during film preparation. The SIMS analysis indicates the reaction between Bi and Pt

Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Yuhuan Xu ◽  
Chih-Hsing Cheng ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Substrate ◽  
Pzt Thin Films ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Technique

ABSTRACTPb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

The effect of growth conditions on the structural and electrical properties of the SiGe heteroepitaxial system

1975 ◽  
Vol 30 (1) ◽  
pp. 91-98 ◽  
Author(s):  
V.N. Vasilevskaja ◽  
R.V. Konakova ◽  
N.V. Osadchaja ◽  
Yu.A. Tkhorik ◽  
M.Yu. Philatov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Growth Conditions ◽  
Structural And Electrical Properties

Study on Multilayered Electrodes for Ferroelectric Thin Film Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
Ilsub Chung ◽  
J.K. Lee ◽  
Wan In Lee ◽  
C.W. Chung
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Electrical Properties ◽  
Physical Properties ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Interfacial Engineering ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Films

ABSTRACTThe ferroelectric properties of PZT on RuO2 electrodes were compared to those on RuOStudy on Multilayered Electrodes for Ferroelectric Thin Film Capacitors. It seems that the microstructure of PZT film plays an important role in the improvement of electrical properties. In particular, the change in the grain size of PZT film is responsible for the enhancement of the electrical properties. It was found in this study that films with smaller grain size had larger coercive fields. The exact dependence of the grain size on the hysteretic property is not fully understood at present. However, it is believed that the grain size affects both domain formation and domain pinning because of the influence of grain boundaries. The change in physical properties of PZT films due to the bottom electrode is understood in terms of interfacial modifications. Here we report on a method to modify physical properties of PZT films utilizing interfacial engineering.

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