New Insights into the Role of Sulfite in BiOX Photocatalytic Pollutants Elimination: In-operando Generation of Plasmonic Bi Metal and Oxygen Vacancies

2021 ◽  
pp. 126207
Author(s):  
Kejian Li ◽  
Kedong Gong ◽  
Juan Liu ◽  
Yang Yang ◽  
Iqra Nabi ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
In Operando

Balanced performance for β-Ga2O3 solar blind photodetectors: The role of oxygen vacancies

2021 ◽  
Vol 112 ◽  
pp. 110808
Author(s):  
Jiang Wang ◽  
Yuanqiang Xiong ◽  
Lijuan Ye ◽  
Wanjun Li ◽  
Guoping Qin ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Solar Blind

Role of oxygen vacancies on ferromagnetism in Fe-doped TiO2 thin films

2007 ◽  
Vol 102 (7) ◽  
pp. 073905 ◽  
Author(s):  
H. J. Meng ◽  
D. L. Hou ◽  
L. Y. Jia ◽  
X. J. Ye ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Tio2 Thin Films ◽  
Doped Tio2

Role of oxygen vacancies for resistive switching in noble metal sandwiched Pr0.67Ca0.33MnO3-δ

2017 ◽  
Vol 110 (24) ◽  
pp. 243502 ◽  
Author(s):  
Thilo Kramer ◽  
Malte Scherff ◽  
Daniel Mierwaldt ◽  
Joerg Hoffmann ◽  
Christian Jooss
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Oxygen Vacancies

scholarly journals The role of oxygen vacancies on resistive switching properties of oxide materials

2020 ◽  
Vol 7 (5) ◽  
pp. 665-683
Author(s):  
Hang Meng ◽  
◽  
Shihao Huang ◽  
Yifeng Jiang
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Oxide Materials

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

CHAPTER 13. Role of Oxygen Vacancies in Gold Oxidation Catalysis

2014 ◽  
pp. 489-511 ◽  
Author(s):  
O. H. Laguna ◽  
M. I. Domínguez ◽  
F. Romero-Sarria ◽  
J. A. Odriozola ◽  
M. A. Centeno
Keyword(s):  
Oxygen Vacancies ◽  
Oxidation Catalysis
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