scholarly journals Side-hole to anti-hole conversion in time-resolved spectral hole burning of ruby: Long-lived spectral holes due to ground state level population storage

2007 ◽  
Vol 127 (2) ◽  
pp. 655-664 ◽  
Author(s):  
Hans Riesen ◽  
Brendan F. Hayward ◽  
Alex Szabo
Keyword(s):  
Ground State ◽  
State Level ◽  
Level Population ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Time Resolved ◽  
Side Hole ◽  
Spectral Hole ◽  
Ground State Level

Time-resolved spectral hole burning

1988 ◽  
Vol 153 (5) ◽  
pp. 376-378 ◽  
Author(s):  
W. Vogel ◽  
D.-G. Welsch ◽  
B. Wilhelmi
Keyword(s):  
Hole Burning ◽  
Spectral Hole Burning ◽  
Time Resolved ◽  
Spectral Hole

Glass versus protein dynamics at low temperature studied by time-resolved spectral hole burning

1998 ◽  
Vol 76-77 ◽  
pp. 327-330 ◽  
Author(s):  
U. Störkel ◽  
T.M.H. Creemers ◽  
F.T.H.den Hartog ◽  
S. Völker
Keyword(s):  
Low Temperature ◽  
Protein Dynamics ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Time Resolved ◽  
Spectral Hole ◽  
Versus Protein

PERSISTENT SPECTRAL HOLE-BURNING IN SEMICONDUCTOR QUANTUM DOTS

1996 ◽  
Vol 03 (01) ◽  
pp. 143-150
Author(s):  
YASUAKI MASUMOTO
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
Laser Excitation ◽  
Semiconductor Quantum Dots ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Total System ◽  
Hole Filling ◽  
Surrounding Matrix ◽  
Spectral Hole

The persistent spectral hole-burning (PSHB) phenomenon was observed in semiconductor quantum dots, CdSe , CuCl , and CuBr , embedded in glass and crystal. In inhomogeneously broadened exciton absorption spectra of these dots, the narrow bleaching hole and its associated structure are made by the narrowband laser excitation and are conserved for more than several hours at 2 K after the laser irradiation. The observation of the PSHB phenomenon in these four kinds of samples shows the generality of the phenomenon in semiconductor quantum dots and requires the existence of more than one ground-state configurations of the total system consisting of quantum dots and surrounding matrix. It means that not only the size distribution but also these ground-state configurations give inhomoge-neous broadening to semiconductor quantum dots. Thermally annealing and light-induced hole-filling phenomena were observed. Hole-burning and hole-filling mechanisms are discussed. Quantum dots consisting of 103–104 atoms behave like molecules or ions in matrix to give the PSHB phenomenon.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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