Spectroscopic properties of OH− doped and Bi-rich Bi4Ge3O12 crystals by vertical Bridgman method

2011 ◽  
Vol 131 (8) ◽  
pp. 1608-1611 ◽  
Author(s):  
Pingsheng Yu ◽  
Liangbi Su ◽  
Hengyu Zhao ◽  
Xin Guo ◽  
Hongjun Li ◽  
...  
2006 ◽  
Vol 408-412 ◽  
pp. 780-783 ◽  
Author(s):  
Akira Sugiyama ◽  
Masamichi Katsurayama ◽  
Yutaka Anzai ◽  
Taiju Tsuboi

2011 ◽  
Vol 33 (6) ◽  
pp. 831-834 ◽  
Author(s):  
Pingsheng Yu ◽  
Liangbi Su ◽  
Hengyu Zhao ◽  
Xin Guo ◽  
Hongjun Li ◽  
...  

Author(s):  
Chang-Bao HUANG ◽  
You-Bao NI ◽  
Hai-Xin WU ◽  
Zhen-You WANG ◽  
Xu-Dong CHENG ◽  
...  

2016 ◽  
Vol 869 ◽  
pp. 637-642
Author(s):  
Rafael Cardoso Toledo ◽  
Chen Y. An ◽  
Irajá Newton Bandeira ◽  
Filipe Estevão de Freitas

Composition profiles of eutectic alloy Pb25.9Sn74.1 atomic % grown by the normal and inverted Bridgman methods are presented and the study of the solute alloy redistribution is made. The inverted vertical Bridgman method, where the solidification occurs from the top to the bottom of the melt under a destabilizing thermal gradient, allows the growth of crystals with buoyancy-driven convection different from that with the usual vertical Bridgman configuration. The scope of this work is to study the influence of the gravity acceleration in the convection process.


2008 ◽  
Vol 43 (5) ◽  
pp. 1239-1245 ◽  
Author(s):  
Jijun Zhang ◽  
Wanqi Jie ◽  
Tao Wang ◽  
Dongmei Zeng ◽  
Shuying Ma ◽  
...  

2016 ◽  
Vol 683 ◽  
pp. 71-76 ◽  
Author(s):  
Konstantin Kokh ◽  
Ivan N. Lapin ◽  
Valery Svetlichnyi ◽  
Perizat Galiyeva ◽  
Askar Bakhadur ◽  
...  

In this work, Ga2S3 crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemical transport method or melt-solution method. Maximal transparency range of 0.48-22.5 μm and at least 10 times higher damage threshold to that for GaSe render anisotropic Ga2S3 crystal among the most prospective crystals for nonlinear applications.


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