Synthesis and Bridgman Growth of Ga2S3 Crystals
2016 ◽
Vol 683
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pp. 71-76
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Keyword(s):
In this work, Ga2S3 crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemical transport method or melt-solution method. Maximal transparency range of 0.48-22.5 μm and at least 10 times higher damage threshold to that for GaSe render anisotropic Ga2S3 crystal among the most prospective crystals for nonlinear applications.
2004 ◽
Vol 412-414
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pp. 607-609
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Keyword(s):
2005 ◽
Vol 34
(9)
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pp. 1215-1224
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2017 ◽
Vol 52
(9)
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pp. 1700092
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2005 ◽
Vol 15
(2)
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pp. 3133-3136
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2008 ◽
Vol 43
(5)
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pp. 1239-1245
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2005 ◽
Vol 426-431
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pp. 583-587
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2011 ◽
Vol 131
(8)
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pp. 1608-1611
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Keyword(s):