Color-tunable emission by adjusting sensitizer (Yb3+) and excitation power of 980 nm in NaGdTiO4:Yb3+/Tm3+/Er3+ phosphors for light emitting diodes

2018 ◽  
Vol 194 ◽  
pp. 225-230 ◽  
Author(s):  
Aihua Zhou ◽  
Feng Song ◽  
Yingdong Han ◽  
Feifei Song ◽  
Dandan Ju ◽  
...  
2015 ◽  
Vol 7 (50) ◽  
pp. 27743-27748 ◽  
Author(s):  
Ji-Hyun Kim ◽  
Byeong Uk Ye ◽  
Joonmo Park ◽  
Chul Jong Yoo ◽  
Buem Joon Kim ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.


Author(s):  
Guojun Zhou ◽  
Jialiang Ding ◽  
Xing-Xing Jiang ◽  
Jian Zhang ◽  
Maxim Molokeev ◽  
...  

Organic-inorganic metal halides have become a multifunctional platform for manipulating photoluminescence due to high-efficient and tunable emissions, especially for lead-free Mn2+-based halides. Herein, the zero-dimensional (0D) bromides of (C5H14N3)2MnBr4 and...


2020 ◽  
Vol 227 ◽  
pp. 117582
Author(s):  
Qianchao Ma ◽  
Qihu Li ◽  
Guangqing Zhang ◽  
Shuiquan Han ◽  
Qianxin Zhang ◽  
...  

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