Spin-polarized calculations of electronic structures in ferromagnetic and antiferromagnetic Zn0.75TM0.25Se (TM=Cr, Fe, Co and Ni)

2012 ◽  
Vol 324 (18) ◽  
pp. 2800-2805 ◽  
Author(s):  
S. Amari ◽  
S. Méçabih ◽  
B. Abbar ◽  
B. Bouhafs
RSC Advances ◽  
2015 ◽  
Vol 5 (1) ◽  
pp. 760-769 ◽  
Author(s):  
Shuguang Zhang ◽  
Ning Han ◽  
Xiaoyao Tan

Spin-polarized DFT calculations were used to investigate the atomic, electronic structures of LaCoO3and La1−xSrxCoO3surfaces. The thermodynamic stability of these surfaces was analyzed with phase diagrams. Influence of Sr-doping was also examined.


2018 ◽  
Vol 32 (02) ◽  
pp. 1750362 ◽  
Author(s):  
Jing Xie ◽  
Quan Xie

The electronic structures and magnetic properties of Fe3Si films epitaxial on Si(001) were systematically investigated by using the first-principle calculations on plane-wave pseudo-potential theory. The calculated results show that Fe3Si films epitaxial on Si(001) have the most stable equilibrium state at the lattice constant c = 5.63 Å. The negative heat of formation and cohesive energy of Fe3Si(001)//Si(001) imply that Fe3Si films epitaxial on Si(001) formed in this manner have high structural stability. The calculated spin polarized energy band structures and density of states indicate that Fe3Si films epitaxial on Si(001) have characteristic of metal, whose bonding modes are covalent bond and metallic bond. The band through Fermi level is mainly due to the Fe 3d states and the Si 3p states. Ferromagnetic properties of Fe3Si(001)//Si(001) are attributed to 3d states of the Fe atoms. The atomic magnetic moments of Fe[A,C] and Fe[B] are different from each other, likewise implying Fe3Si films epitaxial on Si(001) is ferromagnetic.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
H. Fujiwara ◽  
R. Y. Umetsu ◽  
F. Kuroda ◽  
J. Miyawaki ◽  
T. Kashiuchi ◽  
...  

AbstractBand-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando conditions by applying magnetic and/or electric fields. Here we present an advanced spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy $$\hbox {Co}_2\hbox {MnSi}$$ Co 2 MnSi . RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap induced in the buried magnetic layers in an element specific way under the operando conditions.


2021 ◽  
Author(s):  
Liping Liu ◽  
Jin Cao ◽  
Wei Guo ◽  
Chongyu Wang

Abstract Heavy elements (X = Ta/W/Re) play an important role in the performance of superalloys, which enhance the strength, anti-oxidation, creep resistance, and anti-corrosiveness of alloy materials in a high-temperature environment. In the present research, the heavy element doping effects in FCC-Ni (γ) and Ni3Al (γ') systems are investigated in terms of their thermodynamic and mechanical properties, as well as electronic structures. The lattice constant, bulk modulus, elastic constant, and dopant formation energy in non-spin, spin polarized, and spin-orbit coupling (SOC) calculations are compared. The results show that the SOC effects are important in accurate electronic structure calculations for alloys with heavy elements. We find that including spin for both γ and γ' phases is necessary and sufficient for most cases, but the dopant formation energy is sensitive to different spin effects, for instance, in the absence of SOC, even spin-polarized calculations give 1% to 9% variance in the dopant formation energy in our model. Electronic structures calculations indicate that spin polarization causes a split in the metal d states, and SOC introduces a variance in the spin-up and spin-down states of the d states of heavy metals and reduces the magnetic moment of the system.


2014 ◽  
Vol 1704 ◽  
Author(s):  
Alejandro Lopez-Bezanilla

ABSTRACTSpin-polarized first-principles calculations have been conducted to study the electronic structures and magnetic properties of O and S functionalized zigzag aluminium nitride (AlN) nanoribbons. Chemical functionalization with O atoms at the edges strengthens the half-metallic properties of the AlN by adding new electronic states at the Fermi level for one spin-channel and widening the gap of the other. On the contrary, edge-termination with S atoms renders the AlN ribbon a semiconductor. Peierls instabilities towards the dimerization and trimerization of the doping atoms were observed.


2012 ◽  
Vol 519 ◽  
pp. 174-178
Author(s):  
Tong Wei Li ◽  
La Chen ◽  
Yang Wang ◽  
Jin Cang Zhang

The electronic structures of the titanium-doped cubic perovskite ruthenates BaRu1-xTixO3 with x=0.125, 0.25, 0.375, 0.5, 0.625, 0.75, and 0.875 are investigated using the spin-polarized density functional theory within the pseudopotential plane wave method. It is found that a half-metallic phase appears in the 0.75- and 0.875-doped systems, and the origin of half-metallic property is the decrease of t2g bandwidth of Ru 4d states with the increase in x. In addition, the energy gap of BaRu0.25Ti0.75O3 is as large as 1.7 eV at the Fermi level in the up-spin density of states, which suggests a stable half-metallic phase can be obtained in the present systems.


2021 ◽  
Author(s):  
Hidenori Fujiwara ◽  
Rie Umetsu ◽  
Fumiaki Kuroda ◽  
Jun Miyawaki ◽  
Toshiyuki Kashiuchi ◽  
...  

Abstract Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in the next generation spintronics using the spin degrees of freedom. To fully utilize the spintronic material, it is essential to optimize the spin-dependent electronic structures in the operando conditions by applying the magnetic and/or electric fields. Here we present a new spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in the resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in the RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy, Co2MnSi. The RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap with element specific way induced in the buried magnetic layers under the operando conditions.


Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1484 ◽  
Author(s):  
Navaratnarajah Kuganathan ◽  
Ratnasothy Srikaran ◽  
Alexander Chroneos

Buckminsterfullerene (C60) has been advocated as a perfect candidate material for the encapsulation and adsorption of a variety of metals and the resultant metallofullerenes have been considered for the use in different scientific, technological and medical areas. Using spin-polarized density functional theory together with dispersion correction, we examine the stability and electronic structures of endohedral and exohedral complexes formed between coinage metals (Cu, Ag and Au) and both non-defective and defective C60. Encapsulation is exoergic in both forms of C60 and their encapsulation energies are almost the same. Exohedral adsorption of all three metals is stronger than that of endohedral encapsulation in the non-defective C60. Structures and the stability of atoms interacting with an outer surface of a defective C60 are also discussed. As the atoms are stable both inside and outside the C60, the resultant complexes can be of interest in different scientific and medical fields. Furthermore, all complexes exhibit magnetic moments, inferring that they can be used as spintronic materials.


1988 ◽  
Vol 66 (6) ◽  
pp. 629-632 ◽  
Author(s):  
Kenji Shiraishi ◽  
Atsushi Oshiyama ◽  
Nobuyuki Shima ◽  
Takashi Nakayama ◽  
Hiroshi Kamimura

2018 ◽  
Vol 916 ◽  
pp. 69-73
Author(s):  
Sena Güler Özkapı ◽  
Barış Özkapı ◽  
Seyfettin Dalgıç

In this work, we have investigated electronic structures of pure and doped (with Cr and Mn atoms, separately) BN nanowires along [001] direction with zinc blende phase by means of density functional theory calculations. Our results show that the substitution doping of nanowires by Cr and Mn atoms decrases the band gaps of the all BN nanowires. Also, spin polarized calculations exhibit that the density of states (DOS) for spin up and spin down electrons are antisymmetric structure for both Cr and Mn doped BN nanowires. All these show that doped BN nanowire systems have potential applications in electronics and spintronics.


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