Peculiarities of electronic transport in WTe2 single crystal

2022 ◽  
pp. 168985
Author(s):  
V.V. Marchenkov ◽  
A.N. Domozhirova ◽  
S.V. Naumov ◽  
S.M. Podgornykh ◽  
E.B. Marchenkova ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electronic Transport

ChemInform Abstract: Synthesis and Electronic Transport of Single Crystal K3C60.

ChemInform ◽  
2010 ◽  
Vol 24 (6) ◽  
pp. no-no
Author(s):  
X.-D. XIANG ◽  
J. G. HOU ◽  
G. BRICENO ◽  
W. A. VAREKA ◽  
R. MOSTOVOY ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electronic Transport

Electronic transport and optical properties of Mo0.5W0.5Te2 single crystal

2019 ◽  
Vol 45 (2) ◽  
pp. 241-245 ◽  
Author(s):  
V. V. Marchenkov ◽  
A. N. Domozhirova ◽  
A. A. Makhnev ◽  
E. I. Shreder ◽  
S. V. Naumov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystal ◽  
Electronic Transport

Electronic transport property of La2CuO4+δ(0<δ<0.35) single crystal below 320 K

1994 ◽  
Vol 235-240 ◽  
pp. 1323-1324
Author(s):  
J-D. Yu ◽  
M. Itoh ◽  
T. Huang ◽  
Y. Inaguma ◽  
T. Nakamura
Keyword(s):  
Single Crystal ◽  
Transport Property ◽  
Electronic Transport ◽  
Electronic Transport Property

scholarly journals Structural, magnetic, and electronic transport properties of (Sr0.9Ca0.1)3Ru2O7 single crystal

2009 ◽  
Vol 105 (7) ◽  
pp. 07E323 ◽  
Author(s):  
Bin Qian ◽  
Zhe Qu ◽  
Jin Peng ◽  
Tijiang Liu ◽  
Xiaoshan Wu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties

Synthesis and Electronic Transport of Single Crystal K3C60

Science ◽  
1992 ◽  
Vol 256 (5060) ◽  
pp. 1190-1191 ◽  
Author(s):  
X. - D. Xiang ◽  
J. G. Hou ◽  
G. Briceno ◽  
W. A. Vareka ◽  
R. Mostovoy ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electronic Transport

scholarly journals Low-temperature electronic transport of manganese silicide shell-protected single crystal nanowires for nanoelectronics applications

2021 ◽  
Author(s):  
Alexsandro dos Santos Evangelista da Cruz ◽  
Marcos Vinicius Puydinger Santos ◽  
Raul Back Campanelli ◽  
Pascoal Giglio Pagliuso ◽  
Jefferson Bettini ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Electronic Transport ◽  
Oxide Shell ◽  
Core Shell ◽  
Promising Candidate ◽  
Manganese Silicide ◽  
Shell Nanowires ◽  
Electrical Connectors

Recently, core-shell nanowires have been proposed as potential electrical connectors for nanoelectronics components. A promising candidate is Mn5Si3 nanowires encapsulated in an oxide shell, due to their low reactivity and...

scholarly journals Thermal diffusivity of single crystal Bi0.9Sb0.1

2010 ◽  
Vol 42 (1) ◽  
pp. 45-50 ◽  
Author(s):  
Pantelija Nikolic ◽  
S.S. Vujatovic ◽  
T. Ivetic ◽  
M.V. Nikolic ◽  
O. Cvetkovic ◽  
...  
Keyword(s):  
Thermal Diffusivity ◽  
Chemical Composition ◽  
Single Crystal ◽  
Electronic Transport ◽  
Modulation Frequency ◽  
Check Sample ◽  
Bridgman Technique ◽  
Amplitude Spectra ◽  
Hall Effect Measurements ◽  
Sample Homogeneity

A single crystal Bi0.9Sb0.1 ingot was synthesized using the Bridgman technique. Thermal diffusivity and electronic transport properties of single crystal cleaved plates (00l) were determined from PA photoacoustic phase and amplitude spectra obtained using the photoacoustic method with a transmission detection configuration. Both the PA phase and amplitude were measured versus the modulation frequency and numerically analyzed. EDS analyses done to determine chemical composition of the studied samples as well as to check sample homogeneity. Hall effect measurements data were used for the photoacustic measurements.

Heteroepitaxial Nucleation of Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
B. R. Stoner ◽  
P. J. Ellis ◽  
M. T. Mcclure ◽  
S. D. Wolter
Keyword(s):  
Single Crystal ◽  
Electronic Transport ◽  
Diamond Films ◽  
Heteroepitaxial Growth ◽  
Large Area ◽  
Diamond Nucleation ◽  
Single Crystal Diamond ◽  
Single Crystal Films ◽  
Crystal Films

ABSTRACTThe heteroepitaxial nucleation and eventual growth of large area single crystal diamond films has long eluded researchers interested in tapping it's many enabling properties, specifically in the field of active electronics. The uncertainty surrounding the diamond nucleation mechanism(s) and corresponding inability to carefully control this process are often blamed for the difficulty in achieving true heteroepitaxial growth. Biasenhanced nucleation (BEN) has been shown to provide in-situ control of the nucleation process. Subsequent advancements in both nucleation and deposition stages has resulted in highly oriented diamond films, approaching single crystal quality yet still plagued by arrays of medium to low angle grain boundaries that can degrade the electronic transport properties. To further improve upon these results and achieve large area, single crystal films it is believed that development must focus on the more fundamental problems of diamond nucleation. This paper presents a review of recent progress pertaining to the bias-enhanced process and focuses on data specific to the epitaxial nucleation dilemma.

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