Atomic scale structural analysis of liquid immiscibility in binary silicate melt: A case of SiO2‒TiO2 system

2020 ◽  
Vol 53 ◽  
pp. 53-60
Author(s):  
Cuiyu Zhang ◽  
Xuan Ge ◽  
Qiaodan Hu ◽  
Fan Yang ◽  
Pingsheng Lai ◽  
...  
2012 ◽  
Vol 54 (3) ◽  
pp. 159-165
Author(s):  
Yoshifumi OSHIMA ◽  
Yasumasa TANISHIRO ◽  
Takayuki TANAKA ◽  
Kunio TAKAYANAGI

2003 ◽  
Author(s):  
Akira Saito ◽  
Hideo Matsumoto ◽  
Shuji Ohnisi ◽  
Megumi Akai-Kasaya ◽  
Yuji Kuwahara ◽  
...  

2009 ◽  
Vol 167 (1) ◽  
pp. 33-39 ◽  
Author(s):  
J.-C. Lin ◽  
J. A. Kellar ◽  
J.-H. Kim ◽  
N. L. Yoder ◽  
K. H. Bevan ◽  
...  

2019 ◽  
Vol 27 (5) ◽  
pp. 577-597
Author(s):  
Yu. B. Shapovalov ◽  
A. R. Kotelnikov ◽  
I. N. Suk ◽  
V. S. Korzhinskaya ◽  
Z. A. Kotelnikova

The results of an experimental study of phase relations and distribution of elements in silicate melt–salt systems (carbonate, phosphate, fluoride, chloride) melt, silicate melt I–silicate melt II, and also in fluid – magmatic systems in the presence of alkali metal fluorides are presented. Salt extraction of a number of ore elements (Y, REE, Sr, Ba, Ti, Nb, Zr, Ta, W, Mo, Pb) was studied in liquid immiscibility processes in a wide temperature range of 800–1250°С and pressure of 1–5.5 kbar. It is shown that the partition coefficients are sufficient for the concentration of ore elements in the quantity necessary for the genesis of ore deposits. In the fluid-saturated melt of trachyrhyolite, the separation into two silicate liquids has been determined. The partition coefficients of a number of elements (Sr, La, Nb, Fe, Cr, Mo, K, Rb, Cs) between phases L1 and L2 has been obtained. The interaction processes of a heterophase fluid in the granite (quartz)–ore mineral–heterophase fluid (Li, Na, K-fluoride) system were studied at 650–850°C and P = 1 kbar. The formation of the phase of a highly alkaline fluid–saturated silicate melt – Ta and Nb concentrator is shown as a result of the reaction of the fluid with the rock and ore minerals.


Nature ◽  
1955 ◽  
Vol 176 (4476) ◽  
pp. 305-305 ◽  
Author(s):  
W. A. CASSIDY ◽  
E. R. SEGNIT

2000 ◽  
Vol 639 ◽  
Author(s):  
P. Ruterana ◽  
A. E. Wickenden ◽  
M. E. Twigg ◽  
D.D. Koleske ◽  
R. L. Henry ◽  
...  

ABSTRACTMost of the work done on GaN has taken into account layers grown on the (0001) sapphire. However one would expect the growth on (1120) to lead to different structural defects. As has been shown, in one direction, the mismatch is rather small. In this work, we have carried out structural analysis of layers and interfacial relationship. Inside the layers, the density of defects is comparable to that found conventionally in layers grown on top of (0001) sapphire. The growth mode is also mosaic with a grain size of a few microns. One interesting result is the interface structure, which differs from conventional growth where a flat or stepped interface is formed with a large distance between steps. In this case, the interface is found to be rough at the atomic scale so that this roughness has a random distribution. Moreover, the misfit dislocation spacing is 1nm which is only half the dislocation spacing found in GaN growth on (0001) sapphire.


2017 ◽  
Vol 471 ◽  
pp. 92-110 ◽  
Author(s):  
Vadim S. Kamenetsky ◽  
Michael Zelenski ◽  
Andrey Gurenko ◽  
Maxim Portnyagin ◽  
Kathy Ehrig ◽  
...  

2018 ◽  
Vol 478 ◽  
pp. 112-130 ◽  
Author(s):  
Vadim S. Kamenetsky ◽  
Michael Zelenski ◽  
Andrey Gurenko ◽  
Maxim Portnyagin ◽  
Kathy Ehrig ◽  
...  

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