Amorphous silicon solar cells with stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime as i-layers
We have studied the depositions of amorphous silicon, silicon carbon alloy, doped microcrystalline silicon in order to apply these films as the component materials for the p-i-n and double stacked solar cells. We have obtained low band gap a-Si:H by decreasing the deposition rate under the proper preparation conditions and highly conductive, thin microcrystalline Si and SiC layers. We have developed a stable a-Si/a-Si double stacked solar cell with a conversion efficiency of ∼ % using narrow band gap a-Si:H as a i-layer of bottom cell.The performance of this cell does not degrade until 100 hrs illumination under 350 mW/cm2.
Hydrogenated amorphous silicon oxide containing a microcrystalline silicon phase and usage as an intermediate reflector in thin-film silicon solar cells