Quantifying He-point defect interactions in Fe through coordinated experimental and modeling studies of He-ion implanted single-crystal Fe

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

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Impurity-Point Defect Interactions in Ion Implanted Metastable Systems

Materials Science Forum ◽

10.4028/www.scientific.net/msf.15-18.757 ◽

1987 ◽

Vol 15-18 ◽

pp. 757-764 ◽

Cited By ~ 2

Author(s):

O. Meyer ◽

A. Azzam ◽

M.K. Kloska ◽

Andrzej Turos

Keyword(s):

Point Defect ◽

Defect Interactions ◽

Metastable Systems ◽

Ion Implanted

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Detection of a point defect in a silicon single crystal by high-resolution TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138701 ◽

1995 ◽

Vol 53 ◽

pp. 466-467

Author(s):

M. Awaji

Keyword(s):

High Resolution ◽

Single Crystal ◽

Point Defect ◽

Point Defects ◽

Noise Level ◽

Dark Field ◽

Silicon Single Crystal ◽

High Resolution Image ◽

Dark Field Imaging ◽

Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

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