The structural evolution of light-ion implanted into GaAs single crystal after annealing

2021 ◽  
pp. 165395
Author(s):  
Rui Huang ◽  
Tian Lan ◽  
Chong Li ◽  
Jing Li ◽  
Zhiyong Wang
Keyword(s):  
Single Crystal ◽  
Structural Evolution ◽  
Ion Implanted

The structural evolution of light-ion implanted 6H-SiC single crystal: Comparison of the effect of helium and hydrogen

2020 ◽  
Vol 188 ◽  
pp. 609-622 ◽  
Author(s):  
N. Daghbouj ◽  
B.S. Li ◽  
M. Callisti ◽  
H.S. Sen ◽  
J. Lin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Structural Evolution ◽  
Ion Implanted

scholarly journals Simulation of the External Pressure Influence on the Micro-Structural Evolution of a Single Crystal Ni-Based Superalloy

2011 ◽  
Vol 278 ◽  
pp. 247-252
Author(s):  
Inmaculada Lopez-Galilea ◽  
Stephan Huth ◽  
Suzana Gomes Fries ◽  
Ingo Steinbach ◽  
Werner Theisen
Keyword(s):  
Single Crystal ◽  
Microstructural Evolution ◽  
Phase Field ◽  
Structural Evolution ◽  
Field Method ◽  
External Pressure ◽  
Experimental Results ◽  
Alloying Elements ◽  
Phase Field Method

The phase field method has been applied to simulate the microstructural evolution of a commercial single crystal Ni-based superalloy during both, HIP and annealing treatments. The effects of applying high isostatic pressure on the microstructural evolution, which mainly retards the diffusion of the alloying elements causing the loss of the orientational coherency between the phases is demonstrated by the simulation and experimental results

TOF-SIMS and XPS-investigations of ion implanted single crystal 1b-diamonds

2002 ◽  
Vol 374 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Schlett V. ◽  
Fladung T. ◽  
Dieckhoff S. ◽  
Stock R.
Keyword(s):  
Single Crystal ◽  
Tof Sims ◽  
Ion Implanted

scholarly journals Effect of HIP Parameters on the Micro-Structural Evolution of a Single Crystal Ni-Based Superalloy

2011 ◽  
Vol 278 ◽  
pp. 72-77 ◽  
Author(s):  
Inmaculada Lopez-Galilea ◽  
Stephan Huth ◽  
Marion Bartsch ◽  
Werner Theisen
Keyword(s):  
Single Crystal ◽  
Atmospheric Pressure ◽  
High Pressures ◽  
Hot Isostatic Pressing ◽  
Structural Evolution ◽  
Local Deformation ◽  
Local Distribution ◽  
Slow Cooling ◽  
Distribution Of Elements ◽  
Hardened State

For reducing the porosity of single crystal (SX) nickel-based superalloys, Hot Isostatic Pressing (HIP) is used. High pressures of about 100-170 MPa lead to local deformation, which close the pores. However, since HIP also requires high temperatures (1000-1200°C) it has a pronounced effect on the microstructure and the local distribution of elements. This contribution analyses the effect of different HIP treatments on both the microstructure and the segregation of the SX superalloy LEK94 in the as-precipitation-hardened state. In addition, the effects of rapid or slow cooling are analyzed. To distinguish the effect of pressure from those of temperature, the HIPed samples are compared with specimens annealed at atmospheric pressure.

SOFT PHONON RESISTIVITY IN CONDUCTIVE SrTiO3

2000 ◽  
Vol 14 (12) ◽  
pp. 437-446
Author(s):  
K. SUGAWARA
Keyword(s):  
Electrical Resistivity ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Potential Application ◽  
Low Dose ◽  
High Dose ◽  
Resistivity Measurements ◽  
Ion Implanted

Electrical resistivity due to soft phonon (SPR) is proposed. To test SPR, resistivity measurements have been carried out for conductive single-crystal samples of the SrTiO 3 system; Sr 1-x La x TiO 3, SrTi 1-y Nb y O 3 and SrTiO 3 implanted with Fe, Cr or B. Experiments reveal a weak SPR for Sr 1-x La x TiO 3, but no noticeable SPR was found for SrTi 1-y Nb y O 3. Resistivity measurements on the ion-implanted specimens reveal rather profound SPR for low-dose (semiconducting) specimens but weak SPR for high-dose (metallic) specimens. These results indicate that the magnitude of SPR may be carrier-concentration dependent or crystallinity dependent. A possible profound SPR is proposed for SrTiO 3 under optical illumination and superlattices. Also proposed is a potential application of SPR to soft-phonon devices (SPD).

The structure of ion-implanted gold layers in single crystal silicon

1969 ◽  
Vol 19 (162) ◽  
pp. 1179-1188 ◽  
Author(s):  
M. D. Matthews ◽  
P. F. James
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Ion Implanted

Optical and magnetic properties of nitrogen ion implanted MgO single crystal

2011 ◽  
Vol 20 (4) ◽  
pp. 047505 ◽  
Author(s):  
Chun-Ming Liu ◽  
Hai-Quan Gu ◽  
Xia Xiang ◽  
Yan Zhang ◽  
Yong Jiang ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Single Crystal ◽  
Optical And Magnetic Properties ◽  
Nitrogen Ion ◽  
Ion Implanted
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