Ultra-thin 2D transition metal monochalcogenide crystals by planarized reactions

We here present a planarized solid-state chemical reaction that can produce transition metal monochalcogenide (TMMC) 2D crystals with large lateral extent and finely controllable thickness down to individual layers. The enhanced lateral diffusion of a gaseous reactant at the interface between a solid precursor and graphene was found to provide a universal route towards layered TMMCs of different compositions. A unique layer-by-layer growth mechanism yields atomically abrupt crystal interfaces and kinetically controllable thickness down to a single TMMC layer. Our approach stabilizes 2D crystals with commonly unattainable thermodynamic phases, such as β-Cu2S and γ-CuSe, and spectroscopic characterization reveals ultra-large phase transition depression and interesting electronic properties. The presented ability to produce large-scale 2D crystals with high environmental stability was applied to highly sensitive and fast optoelectronic sensors. Our approach extends the morphological, compositional, and thermodynamic complexity of 2D materials.

Suppressing Barite Crystallization with Organophosphorus Compounds

Molecular modifiers can display a wide range of interactions with crystal interfaces to impede their growth. In this work we evaluate the efficacy of a naturally derived phosphorous-containing molecule, phytate,...

Meniscus-controlled printing of single-crystal interfaces showing extremely sharp switching transistor operation

Meniscus, a curvature of droplet surface around solids, takes critical roles in solution-based thin-film processing. Extension of meniscus shape, and eventual uniform film growth, is strictly limited on highly lyophobic surfaces, although such surface should considerably improve switching characteristics. Here, we demonstrate a technique to control the solution meniscus, allowing to manufacture single-crystalline organic semiconductor (OSC) films on the highest lyophobic amorphous perfluoropolymer, Cytop. We used U-shaped metal film pattern produced on the Cytop surface, to initiate OSC film growth and to keep the meniscus extended on the Cytop surface. The growing edge of the OSC film helped maintain the meniscus extension, leading to a successive film growth. This technique facilitates extremely sharp switching transistors with a subthreshold swing of 63 mV dec−1 owing to the effective elimination of charge traps at the semiconductor/dielectric interface. The technique should expand the capability of print production of functional films and devices.