Thermochemistry and growth mechanism of SiC nanowires

2017 ◽  
Vol 253 ◽  
pp. 282-286 ◽  
Author(s):  
Jianjun Chen ◽  
Lijuan Ding ◽  
Lipeng Xin ◽  
Fan Zeng ◽  
Jun Chen
Keyword(s):  
Growth Mechanism ◽  
Sic Nanowires

Growth mechanism of β-SiC nanowires in SiC reticulated porous ceramics

2007 ◽  
Vol 33 (6) ◽  
pp. 901-904 ◽  
Author(s):  
Xiumin Yao ◽  
Shouhong Tan ◽  
Zhengren Huang ◽  
Shaoming Dong ◽  
Dongliang Jiang
Keyword(s):  
Growth Mechanism ◽  
Porous Ceramics ◽  
Sic Nanowires

Graphene-based SiC nanowires with nanosheets: synthesis, growth mechanism and photoluminescence properties

CrystEngComm ◽  
2020 ◽  
Vol 22 (24) ◽  
pp. 4074-4078 ◽  
Author(s):  
Zhihui Hu ◽  
Zhi Chen ◽  
Juntong Huang ◽  
Mingge Yan ◽  
Meng Zhang ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Growth Mechanism ◽  
Graphene Nanosheets ◽  
Metal Catalyst ◽  
Direct Reaction ◽  
Photoluminescence Properties ◽  
Sic Nanowires

3C-SiC nanowires with nanosheets were synthesized via a direct reaction of Si vapor (from solid silicon) and SiO vapor (from silicon and silicon dioxide) with graphene nanosheets at 1500 °C without any additional metal catalyst.

Microstructure and growth mechanism of SiC nanowires with periodically fluctuating hexagonal prisms by CVD

2010 ◽  
Vol 508 (2) ◽  
pp. L36-L39 ◽  
Author(s):  
Yanhui Chu ◽  
Qiangang Fu ◽  
Zhengzhong Zhang ◽  
Hejun Li ◽  
Kezhi Li ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Sic Nanowires

Preparation and growth mechanism of β-SiC nanowires by using a simplified thermal evaporation method

2015 ◽  
Vol 419 ◽  
pp. 20-24 ◽  
Author(s):  
Haitao Liu ◽  
Zhaohui Huang ◽  
Minghao Fang ◽  
Yan-gai Liu ◽  
Xiaowen Wu
Keyword(s):  
Growth Mechanism ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Sic Nanowires

scholarly journals Growth Mechanism of Cubic-Silicon Carbide Nanowires

2009 ◽  
Vol 2009 ◽  
pp. 1-5 ◽  
Author(s):  
K. Y. Cheong ◽  
Z. Lockman
Keyword(s):  
Silicon Carbide ◽  
Activated Carbon ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Carbon Powder ◽  
Si Substrate ◽  
Sic Nanowires ◽  
Cubic Silicon Carbide

Cubic-SiC nanowires were synthesized using activated carbon powder and Si substrate in vacuum at 1200–1350°C for 1–4 hours. The nanowires were grown according to the following proposed mechanisms: (1) diffusion of C/CO into Si substrate, (2) weakening of Si bond and atomic kick-out, (3) formation of Si-C in vapor phase, (4) formation of saturated SiC layer, (5) formation of pyramid-like SiC nanostructure, and (6) formation of SiC nanowires.

scholarly journals Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5179
Author(s):  
Chuchu Guo ◽  
Laifei Cheng ◽  
Fang Ye ◽  
Qing Zhang
Keyword(s):  
Thermal Stability ◽  
Growth Mechanism ◽  
Emission Spectra ◽  
Photoluminescence Properties ◽  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Good Thermal Stability ◽  
Sic Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Different Thickness

We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000 °C. The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

scholarly journals Adjusting the Morphology and Properties of SiC Nanowires by the Catalyst Control

2020 ◽  
Author(s):  
Chuchu Guo ◽  
Laifei Cheng ◽  
Fang Ye
Keyword(s):  
Thermal Stability ◽  
Growth Mechanism ◽  
Emission Spectra ◽  
Photoluminescence Properties ◽  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Good Thermal Stability ◽  
Sic Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Different Thickness

Abstract Herein, we report the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, the pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, the emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000℃.The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

Sign in / Sign up

Export Citation Format

Share Document