Graphene-based SiC nanowires with nanosheets: synthesis, growth mechanism and photoluminescence properties

3C-SiC nanowires with nanosheets were synthesized via a direct reaction of Si vapor (from solid silicon) and SiO vapor (from silicon and silicon dioxide) with graphene nanosheets at 1500 °C without any additional metal catalyst.

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Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Materials ◽

10.3390/ma13225179 ◽

2020 ◽

Vol 13 (22) ◽

pp. 5179

Author(s):

Chuchu Guo ◽

Laifei Cheng ◽

Fang Ye ◽

Qing Zhang

Keyword(s):

Thermal Stability ◽

Growth Mechanism ◽

Emission Spectra ◽

Photoluminescence Properties ◽

Si Substrate ◽

Vapor Liquid Solid ◽

Good Thermal Stability ◽

Sic Nanowires ◽

Vapor Liquid Solid Mechanism ◽

Different Thickness

We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000 °C. The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

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Adjusting the Morphology and Properties of SiC Nanowires by the Catalyst Control

10.21203/rs.3.rs-33288/v1 ◽

2020 ◽

Author(s):

Chuchu Guo ◽

Laifei Cheng ◽

Fang Ye

Keyword(s):

Thermal Stability ◽

Growth Mechanism ◽

Emission Spectra ◽

Photoluminescence Properties ◽

Si Substrate ◽

Vapor Liquid Solid ◽

Good Thermal Stability ◽

Sic Nanowires ◽

Vapor Liquid Solid Mechanism ◽

Different Thickness

Abstract Herein, we report the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, the pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, the emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000℃.The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

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Effect of carbon nanotexture on the synthesis, initial growth mechanism and photoluminescence properties of SiC nanowires

Nanotechnology ◽

10.1088/1361-6528/abc8b4 ◽

2020 ◽

Vol 32 (8) ◽

pp. 085601

Author(s):

Xiangmin Xie ◽

Zhe’an Su ◽

Dong Huang ◽

Cheng Yang ◽

Yafeng Wang ◽

...

Keyword(s):

Growth Mechanism ◽

Initial Growth ◽

Photoluminescence Properties ◽

Sic Nanowires

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Preparation, Growth Mechanism, Upconversion, and Near-Infrared Photoluminescence Properties of Convex-Lens-like NaYF4 Microcrystals Doped with Various Rare Earth Ions Excited at 808 nm

Crystal Growth & Design ◽

10.1021/acs.cgd.7b01667 ◽

2018 ◽

Vol 18 (3) ◽

pp. 1758-1767 ◽

Cited By ~ 15

Author(s):

Yingjin Ma ◽

Zhengwen Yang ◽

Hailu Zhang ◽

Jianbei Qiu ◽

Zhiguo Song

Keyword(s):

Rare Earth ◽

Growth Mechanism ◽

Near Infrared ◽

Rare Earth Ions ◽

Photoluminescence Properties ◽

Convex Lens

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SiC nanowires in large quantities: Synthesis, band gap characterization, and photoluminescence properties

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2008.11.099 ◽

2009 ◽

Vol 311 (4) ◽

pp. 1036-1041 ◽

Cited By ~ 48

Author(s):

Sheng-Cheng Chiu ◽

Yuan-Yao Li

Keyword(s):

Band Gap ◽

Photoluminescence Properties ◽

Sic Nanowires

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Growth mechanism of β-SiC nanowires in SiC reticulated porous ceramics

Ceramics International ◽

10.1016/j.ceramint.2006.01.016 ◽

2007 ◽

Vol 33 (6) ◽

pp. 901-904 ◽

Cited By ~ 44

Author(s):

Xiumin Yao ◽

Shouhong Tan ◽

Zhengren Huang ◽

Shaoming Dong ◽

Dongliang Jiang

Keyword(s):

Growth Mechanism ◽

Porous Ceramics ◽

Sic Nanowires

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A novel two-stage synthesis for 3C–SiC nanowires by carbothermic reduction and their photoluminescence properties

Journal of Materials Science ◽

10.1007/s10853-019-03749-5 ◽

2019 ◽

Vol 54 (19) ◽

pp. 12450-12462 ◽

Cited By ~ 6

Author(s):

Zhouzhou Shen ◽

Junhong Chen ◽

Bin Li ◽

Guangqi Li ◽

Jingwei Li ◽

...

Keyword(s):

Carbothermic Reduction ◽

Photoluminescence Properties ◽

Two Stage ◽

Sic Nanowires ◽

Stage Synthesis

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Similarity analysis of stacking sequences in a SiC nanowire pair grown from the same catalyst nanoparticle using Levenshtein distance

Microscopy ◽

10.1093/jmicro/dfaa015 ◽

2020 ◽

Vol 69 (4) ◽

pp. 234-239

Author(s):

Takayuki Kataoka ◽

Takumi Noguchi ◽

Hideo Kohno

Keyword(s):

Formation Mechanism ◽

Stacking Faults ◽

Surrogate Data ◽

Binary Sequences ◽

Metal Catalyst ◽

Similarity Analysis ◽

Levenshtein Distance ◽

Proof Of Concept ◽

Sic Nanowires ◽

Catalyst Nanoparticle

Abstract Stacking faults are easily formed in silicon carbide (SiC) crystals, and this is also the case for SiC nanowires. The stacking faults exercise influences on SiC’s properties, therefore it is important to understand their formation mechanism and to control their formation for applications of SiC and its nanowires. In this study, we propose a method for investigating stacking faults’ formation mechanism in nanowires and provide its proof of concept. Stacking sequences in a pair of SiC nanowires that were grown from the same metal catalyst nanoparticle were quantified as a pair of binary sequences, and Levenshtein distances between partial sequences extracted from the two sequences were measured to detect similarity between them, and the result was compared with that obtained using a surrogate data of one sequence. The similarity analysis using Levenshtein distances works as a probe for investigating possible influences of some phenomena in the catalyst nanoparticle on the formation of stacking faults. The analysis did not detect a correlation between the two sequences. Although a possibility that the formation of stacking faults in the nanowires were owing to some phenomena in the catalyst nanoparticle cannot be denied, the extrinsic cause in the catalyst nanoparticle was not detected through our analysis in this case.

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Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.209 ◽

2013 ◽

Vol 740-742 ◽

pp. 209-212 ◽

Cited By ~ 1

Author(s):

Rooban Venkatesh K.G. Thirumalai ◽

Bharat Krishnan ◽

Albert Davydov ◽

Joseph Neil Merrett ◽

Yaroslav Koshka

Keyword(s):

Vapor Phase ◽

Gas Flow ◽

Substrate Surface ◽

Metal Catalyst ◽

Catalyst Nanoparticles ◽

Sic Nanowires ◽

Cvd Growth ◽

Hot Zone

A method was developed for growing SiC nanowires without depositing a metal catalyst on the targeted surfaces prior to the CVD growth. The proposed method utilizes in-situ vapor-phase catalyst delivery via sublimation of the catalyst from a metal source placed in the hot zone of the CVD reactor, followed by condensation of the catalyst-rich vapor on the bare substrate surface to form the catalyst nanoparticles. The vapor-phase catalyst delivery and the resulting nanowire density was found to be influenced by both the gas flow rate and the catalyst diffusion through the boundary layer above the catalyst source. The origin of undesirable bushes of nanowires and the role of the C/Si ratio were established.

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