Growth Mechanism of Cubic-Silicon Carbide Nanowires

Cubic-SiC nanowires were synthesized using activated carbon powder and Si substrate in vacuum at 1200–1350°C for 1–4 hours. The nanowires were grown according to the following proposed mechanisms: (1) diffusion of C/CO into Si substrate, (2) weakening of Si bond and atomic kick-out, (3) formation of Si-C in vapor phase, (4) formation of saturated SiC layer, (5) formation of pyramid-like SiC nanostructure, and (6) formation of SiC nanowires.

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The Fabrication and Indentation of Cubic Silicon Carbide Diaphragm for Acoustic Sensing

Micromachines ◽

10.3390/mi12091101 ◽

2021 ◽

Vol 12 (9) ◽

pp. 1101

Author(s):

Siti Aisyah Zawawi ◽

Azrul Azlan Hamzah ◽

Burhanuddin Yeop Majlis ◽

Faisal Mohd-Yasin

Keyword(s):

Silicon Carbide ◽

Plastic Deformation ◽

Elastic Behaviour ◽

Maximum Pressure ◽

Acoustic Sensors ◽

Si Substrate ◽

Optimum Dimension ◽

Two Samples ◽

Low Load ◽

Cubic Silicon Carbide

In this study, 550 nm thick cubic silicon carbide square diaphragms were back etched from Si substrate. Then, indentation was carried out to samples with varying dimensions, indentation locations, and loads. The influence of three parameters is documented by analyzing load-displacement curves. It was found that diaphragms with bigger area, indented at the edge, and low load demonstrated almost elastic behaviour. Furthermore, two samples burst and one of them displayed pop-in behaviour, which we determine is due to plastic deformation. Based on optimum dimension and load, we calculate maximum pressure for elastic diaphragms. This pressure is sufficient for cubic silicon carbide diaphragms to be used as acoustic sensors to detect poisonous gasses.

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Synthesis of silicon carbide fromcoal fly ash and activated carbon powder

Material Science Research India ◽

10.13005/msri/060202 ◽

2009 ◽

Vol 6 (2) ◽

pp. 251-256 ◽

Cited By ~ 1

Author(s):

Sulardjaka Sulardjaka. ◽

Jamasri. Jamasri ◽

M.W. Wildan ◽

Kusnanto Kusnanto

Keyword(s):

Silicon Carbide ◽

Activated Carbon ◽

Fly Ash ◽

Carbon Powder

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Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Materials ◽

10.3390/ma13225179 ◽

2020 ◽

Vol 13 (22) ◽

pp. 5179

Author(s):

Chuchu Guo ◽

Laifei Cheng ◽

Fang Ye ◽

Qing Zhang

Keyword(s):

Thermal Stability ◽

Growth Mechanism ◽

Emission Spectra ◽

Photoluminescence Properties ◽

Si Substrate ◽

Vapor Liquid Solid ◽

Good Thermal Stability ◽

Sic Nanowires ◽

Vapor Liquid Solid Mechanism ◽

Different Thickness

We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000 °C. The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

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Adjusting the Morphology and Properties of SiC Nanowires by the Catalyst Control

10.21203/rs.3.rs-33288/v1 ◽

2020 ◽

Author(s):

Chuchu Guo ◽

Laifei Cheng ◽

Fang Ye

Keyword(s):

Thermal Stability ◽

Growth Mechanism ◽

Emission Spectra ◽

Photoluminescence Properties ◽

Si Substrate ◽

Vapor Liquid Solid ◽

Good Thermal Stability ◽

Sic Nanowires ◽

Vapor Liquid Solid Mechanism ◽

Different Thickness

Abstract Herein, we report the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, the pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, the emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000℃.The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

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