Study on microstructure and dielectric properties of aluminum nitride ceramics

Oxygen impurities may significantly influence the properties of nitride ceramics with a strong dependence on the microstructural distribution of the impurity. For example, amorphous oxygen-rich grain boundary phases are well-known to cause high-temperature mechanical strength degradation in silicon nitride whereas solutionized oxygen is known to decrease the thermal conductivity of aluminum nitride. Microanalytical characterization of these impurities by spectral methods in the AEM is complicated by reactions which form oxygen-rich surface phases not representative of the bulk material. Furthermore, the impurity concentrations found in higher quality ceramics may be too low to measure by EDS or PEELS. Consequently an alternate method for the characterization of impurities in these ceramics has been investigated.Convergent beam electron diffraction (CBED) is a promising technique for the study of impurity distributions in aluminum nitride ceramics. Oxygen is known to enter into stoichiometric solutions with AIN with a consequent decrease in lattice parameter.

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Improving thermal conductivity of aluminum nitride ceramics by refining microstructure

Materials Letters ◽

10.1016/s0167-577x(99)00241-4 ◽

2000 ◽

Vol 43 (3) ◽

pp. 114-117 ◽

Cited By ~ 14

Author(s):

Yaocheng Liu ◽

Heping Zhou ◽

Yin Wu ◽

Liang Qiao

Keyword(s):

Thermal Conductivity ◽

Aluminum Nitride ◽

Nitride Ceramics

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Metallized coatings indifferent to aluminum nitride ceramics

Glass and Ceramics ◽

10.1007/bf03180901 ◽

1998 ◽

Vol 55 (3-4) ◽

pp. 83-87

Author(s):

V. A. Kursekov ◽

V. G. Leonov ◽

A. S. Vlasov

Keyword(s):

Aluminum Nitride ◽

Nitride Ceramics

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Densification of Aluminum Nitride Ceramics with CaF2 Additive

High-Performance Ceramics V - Key Engineering Materials ◽

10.4028/0-87849-473-1.970 ◽

2008 ◽

pp. 970-972

Author(s):

Yan Xiong ◽

Zheng Yi Fu ◽

Hao Wang

Keyword(s):

Aluminum Nitride ◽

Nitride Ceramics

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Metallization Behavior in Aluminum Nitride Electronic Packages

MRS Proceedings ◽

10.1557/proc-203-247 ◽

1990 ◽

Vol 203 ◽

Author(s):

Ellice Y. Luh ◽

Leonard E. Dolhert ◽

Jack H. Enloe ◽

John W. Lau

Keyword(s):

Thermal Conductivity ◽

Dielectric Properties ◽

Aluminum Nitride ◽

High Density ◽

High Thermal Conductivity ◽

Electronic Packages ◽

Oxide Ceramics ◽

Chemical Behavior ◽

Hermetic Seal ◽

Silicon Based

ABSTRACTCharacteristics such as CTE close to that of silicon, high thermal conductivity, and good dielectric properties make aluminum nitride (AIN) an excellent dielectric for packaging silicon-based high density multichip interconnects. However, there remains many aspects of its behavior that have not been characterized. One such example is the behavior of the various metallizations used within a package. As with A12O3, these metallizations must contribute toward a hermetic seal separating the die from the environment. However, the chemical behavior of the metallization systems used for A12O3 may not be compatible with non-oxide ceramics such as AIN. Consequently, these chemical interactions are investigated in view of the requirements for each application within electronic packages. Hermeticity testing results are also included in the discussion.

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