Effect of electrode material on AC electrical conductivity of organic zinc phthalocyanine semiconducting thin films

2005 ◽  
Vol 94 (1) ◽  
pp. 165-171 ◽  
Author(s):  
A.O. Abu-Hilal ◽  
A.M. Saleh ◽  
R.D. Gould
2003 ◽  
Vol 101 (1-3) ◽  
pp. 334-337 ◽  
Author(s):  
M. Theodoropoulou ◽  
C.A. Krontiras ◽  
N. Xanthopoulos ◽  
S.N. Georga ◽  
M.N. Pisanias ◽  
...  

2020 ◽  
Vol 22 (24) ◽  
pp. 13554-13562 ◽  
Author(s):  
José Diego Fernandes ◽  
Mateus D. Maximino ◽  
Maria Luisa Braunger ◽  
Matheus S. Pereira ◽  
Clarissa de Almeida Olivati ◽  
...  

Organic thin films supramolecular architecture plays an essential factor in the performance of optical and electronic organic devices.


2007 ◽  
Vol 21 (01) ◽  
pp. 55-67 ◽  
Author(s):  
A. O. ABU-HILAL ◽  
R. D. GOULD ◽  
M. I. ABU-TAHA ◽  
A. M. SALEH

The capacitance and loss tangent of thermally evaporated zinc phthalocyanine, ZnPc , semiconducting thin films were measured in the temperature range of 180–430 K and frequency between 0.1 and 20 kHz. Aluminum and gold electrical contact electrodes were employed to sandwich ZnPc films. For both electrode types, the capacitance and loss tangent showed strong dependence on both temperature and frequency. Such dependence is related to the relevant temperature and frequency range under consideration. The capacitance has strong temperature dependence for T>240 K and frequency below 3 kHz, while it becomes a constant at higher frequencies and all temperatures. The loss tangent dependence on temperature is more evident at low frequencies and a minimum or an indication of a minimum was observed in tan δ versus f curves. Loss tangent variation with temperature was not monotonic for all frequencies. An anomaly (maximum) in tan δ was observed approximately between 300 and 360 K. This maximum was attributed to the presence of oxygen molecules in the sample and their subsequent exhaustion as the temperature is increased. The behavior of capacitance and loss tangent (for both Al and Au -electrodes) may be explained qualitatively and successfully in terms of an equivalent circuit model.


Quimica Hoy ◽  
2011 ◽  
Vol 2 (1) ◽  
pp. 4
Author(s):  
Sarah Messina ◽  
Paz Hernández ◽  
Yolanda Peña

In this paper we present a method to produce polycrystalline CuSbS2 thin ?lms through a solid-state reaction at 350 ºC and 400 ºC involving thin ?lm multilayer of Sb2S3 -CuS or Cu2-xSe by chemical bath deposition technique. The formation of the ternary compound was confirmed by X-ray di?raction (XRD). A direct optical band gap of approx. 1.57 eV anda p-type electrical conductivity of 10-3 (Ω•cm)-1 were measured. These optoelectronic characteristics show perspective for the use of CuSbS, as a suitable absorber material in photovoltaic applications.


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