Strong red emission and electrical properties of highly c -axis oriented Eu 3+ -doped bismuth vanadate ferroelectric thin films

2014 ◽  
Vol 148 (3) ◽  
pp. 854-858 ◽  
Author(s):  
Wei Xie ◽  
Li Su ◽  
Tongliang Sa ◽  
Jianhui Fu ◽  
Wei Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ferroelectric Thin Films ◽  
Bismuth Vanadate ◽  
Red Emission

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

Reactive ion etching damage to the electrical properties of ferroelectric thin films

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Etching Time ◽  
Ion Etching ◽  
Degradation Properties ◽  
Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

scholarly journals Enhanced electrical properties of ferroelectric thin films by ultraviolet radiation

2005 ◽  
Vol 87 (22) ◽  
pp. 222904 ◽  
Author(s):  
Neil McN. Alford ◽  
Peter Kr. Petrov ◽  
Aleksandr G. Gagarin ◽  
Andrey B. Kozyrev ◽  
Aleksandr I. Sokolov ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ultraviolet Radiation ◽  
Ferroelectric Thin Films
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