Improved Electrical Properties and Strong Red Emission of Pr3+-Doped x K0.5Bi0.5TiO3-(1−x)Na0.5Bi0.5TiO3 Lead-Free Ferroelectric Thin Films

Ferroelectric thin films containing the same volume fraction of the perovskite structure (Na0.5Bi0.5)TiO3 (NBT) and layered structure Bi4Ti3O12 (BIT) were prepared with different stacking sequence. Na0.5Bi4.5Ti4O15 thin film, solid solution of NBT and BIT, was also synthesized to compare with the alternative layered films. Their crystal structure, microstructure and electrical properties were investigated as a function of number of interface. It was found that the interface area as well as each material property is critical to the electrical properties. The alternative layer thin films between NBT and BIT showed positive effect on the dielectric behavior than the single NBIT compound film.

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Synthesis and Electrical Properties of (Bi1/2Na1/2)TiO3(BNT) Ferroelectric Thin Films by Liquid Sprayed Mist Chemical Vapor Deposition Technique

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2006.038 ◽

2006 ◽

Vol 6 (11) ◽

pp. 3479-3482

Author(s):

Bok-Hee Kim ◽

Sang-Hee Kim ◽

Jong-Hwan Kim ◽

Kun-Jae Lee ◽

Yong-Ho Choa ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Ferroelectric Thin Films ◽

Deposition Technique ◽

Chemical Vapor Deposition Technique ◽

Vapor Deposition Technique

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Structural studies of zirconium doped Ba0.70Sr0.30TiO3 lead free ferroelectric thin films

10.1063/1.4946243 ◽

2016 ◽

Cited By ~ 1

Author(s):

Sarita Sharma ◽

Mast Ram ◽

Shilpa Thakur ◽

Hakikat Sharma ◽

N. S. Negi

Keyword(s):

Thin Films ◽

Ferroelectric Thin Films ◽

Lead Free ◽

Structural Studies

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Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

MRS Proceedings ◽

10.1557/proc-361-93 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 4

Author(s):

W. Pan ◽

C.L. Thio ◽

S.B. Desu ◽

Cheewon Chung

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Leakage Current ◽

Reactive Ion Etching ◽

Ferroelectric Thin Films ◽

Electric Properties ◽

Etching Time ◽

Ion Etching ◽

Before And After ◽

Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

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