Growth direction and exposed facets of Cu/Cu2O nanostructures affect product selectivity in CO2 electroreduction

2021 ◽  
pp. 125650
Author(s):  
Carmen Castro-Castillo ◽  
Kamala Kanta Nanda ◽  
Elías Mardones-Herrera ◽  
Valeria Gazzano ◽  
Domingo Ruiz-León ◽  
...  
Keyword(s):  
Growth Direction ◽  
Product Selectivity ◽  
Co2 Electroreduction ◽  
Exposed Facets

On the mechanism of high product selectivity for HCOOH using Pb in CO2 electroreduction

2016 ◽  
Vol 18 (14) ◽  
pp. 9652-9657 ◽  
Author(s):  
Seoin Back ◽  
Jun-Hyuk Kim ◽  
Yong-Tae Kim ◽  
Yousung Jung
Keyword(s):  
Electron Transfer ◽  
High Selectivity ◽  
Reduction Reaction ◽  
Transfer Mechanism ◽  
Product Selectivity ◽  
Electron Transfer Mechanism ◽  
Co2 Electroreduction

To understand a high selectivity for HCOOH on the Pb electrode during the CO2 reduction reaction, we suggest a proton-assisted-electron-transfer mechanism, and validate the new mechanism by experimentally measuring onset potentials for CO2 reduction vs. H2 production. We find that the origin of this high selectivity lies in the strong O-affinitive and weak C-, H-affinitive characteristics of Pb.

Directing the selectivity of CO2 electroreduction to target C2 products via non-metal doping on Cu surfaces

2021 ◽  
Author(s):  
Xing Zhi ◽  
Yan Jiao ◽  
Yao Zheng ◽  
Kenneth Davey ◽  
Shi-Zhang Qiao
Keyword(s):  
Oxygen Affinity ◽  
Product Selectivity ◽  
Metal Doping ◽  
Co2 Electroreduction ◽  
Metal Doped ◽  
Late Stages

Understanding the late stages of C2 pathways provides great opportunities for fully achieving a selective CO2 electroreduction. The C2 product selectivity can be directed by the active site's oxygen affinity on a range of non-metal doped Cu surfaces.

scholarly journals Catalyst Particle Density Controls Hydrocarbon Product Selectivity in CO2 Electroreduction on CuO x

ChemSusChem ◽  
2017 ◽  
Vol 10 (22) ◽  
pp. 4642-4649 ◽  
Author(s):  
Xingli Wang ◽  
Ana Sofia Varela ◽  
Arno Bergmann ◽  
Stefanie Kühl ◽  
Peter Strasser
Keyword(s):  
Particle Density ◽  
Catalyst Particle ◽  
Product Selectivity ◽  
Co2 Electroreduction ◽  
Hydrocarbon Product

Morphological and Compositional Design of Pd-Cu Bimetallic Nanocatalysts with Controllable Product Selectivity toward CO2 Electroreduction

Small ◽  
2017 ◽  
Vol 14 (7) ◽  
pp. 1703314 ◽  
Author(s):  
Wenjin Zhu ◽  
Lei Zhang ◽  
Piaoping Yang ◽  
Xiaoxia Chang ◽  
Hao Dong ◽  
...  
Keyword(s):  
Product Selectivity ◽  
Co2 Electroreduction ◽  
Compositional Design ◽  
Bimetallic Nanocatalysts

A Novel TEM Technique for Characterizing As-Grown CVD Diamond Films

1991 ◽  
Vol 49 ◽  
pp. 956-957 ◽  
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Dark Field ◽  
Growth Surface ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
First Time ◽  
Microstructural Studies

Microstructural studies by transmission electron microscopy (TEM) of diamond films grown by chemical vapor deposition (CVD) usually involve tedious specimen preparation. This process has been avoided with a technique that is described in this paper. For the first time, thick as-grown diamond films have been examined directly in a conventional TEM without thinning. With this technique, the important microstructures near the growth surface have been characterized. An as-grown diamond film was fractured on a plane containing the growth direction. It took about 5 min to prepare a sample. For TEM examination, the film was tilted about 30-45° (see Fig. 1). Microstructures of the diamond grains on the top edge of the growth face can be characterized directly by transmitted electron bright-field (BF) and dark-field (DF) images and diffraction patterns.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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