UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor deposition

2019 ◽  
Vol 118 ◽  
pp. 110488 ◽  
Author(s):  
Linan He ◽  
Caina Luan ◽  
Xianjin Feng ◽  
Hongdi Xiao ◽  
Xiaokun Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal-Organic Chemical Vapor Deposition Routes to Films of Transparent Conducting Oxides

1997 ◽  
Vol 495 ◽  
Author(s):  
A. Wang ◽  
S. C. Cheng ◽  
J. A. Belot ◽  
R. J. Mcneely ◽  
J. Cheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carrier Density ◽  
Chemical Vapor ◽  
Optical Transparency ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Electrical Conductivities ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTThis contribution reports the in situ growth of transparent, conducting GaxIn2-xO3 and ZnkIn2Ok+3 films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2 (dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 – 1.0 range is predominantly cubic with 25° C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2 × 1020 cm−3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range K = 0.16 – 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25° C) as high as 1000 S/cm (n-type; carrier density = 3.7 × 1020 cm−3, mobility = 18.6 cm2/Vs) for K = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition (Mocvd) of Optical Films

1999 ◽  
Vol 597 ◽  
Author(s):  
John McAleese ◽  
L. Gary Provost ◽  
Gary S. Tompa ◽  
Andrei Colibaba-Evulet ◽  
Nick G. Gulmac ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transparent Conducting Oxide ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Rotating Disk Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractOver the past 30 years, the need for transparent conducting oxide coatings has been met almost exclusively by tin doped indium-oxide. As the display market advances in complexity, the demand for alternative transparent materials exhibiting high conductivity and stability has become greater. In this paper, we discuss briefly the merits of using doped ZnO as a superior transparent conducting oxide. We report here our results in scaling our ZnO MOCVD reactor technology from 5° to 12° diameter susceptors. Using Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition, we have been able to obtain large area uniformity on multiple (14 cm × 9 cm) glass sheets per deposition run. Promising film characteristics suggest significant application in the field of flat panel displays and other optical systems may be possible.

scholarly journals Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition

2016 ◽  
Vol 435 ◽  
pp. 6-11 ◽  
Author(s):  
Fikadu Alema ◽  
Oleg Ledyaev ◽  
Ross Miller ◽  
Valeria Beletsky ◽  
Andrei Osinsky ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mg Content ◽  
Organic Chemical Vapor Deposition

scholarly journals The Growth and Doping of Al(As)Sb by Metal-Organic Chemical Vapor Deposition

1996 ◽  
Vol 421 ◽  
Author(s):  
R. M. Biefeld ◽  
A. A. Allerman ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
Order Of Magnitude ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Cladding Layers

AbstractAlSb and AlAsxSb1−x epitaxial films grown by metal-organic chemical vapor deposition were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500°C and 76 torr using trimethylamine or ethyldimethylamine alane and triethylantimony. We examined the growth of AlAsSb using temperatures of 500 to 600 ° C, pressures of 65 to 630 torr, V/Ill ratios of 1–17, and growth rates of 0.3 to 2.7 μm/hour in a horizontal quartz reactor. SIMS showed C and 0 levels below 2 × 1018 cm−3 and 6×1018 cm−3 respectively for undoped AlSb. Similar levels of O were found in AlAs0.16Sb0.84 films but C levels were an order of magnitude less in undoped and Sn-doped AlAs0.16 Sb0.84 films. Hall measurements of AlAs0.16Sb0.84 showed hole concentrations between l×1017 cm−3 to 5×1018 cm−3 for Zn-doped material and electron concentrations in the low to mid 1018 cm−3 for Sndoped material. We have grown pseudomorphic InAs/InAsSb quantum well active regions on AlAsSb cladding layers. Photoluminescence of these layers has been observed up to 300 K.

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