Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition (Mocvd) of Optical Films

1999 ◽  
Vol 597 ◽  
Author(s):  
John McAleese ◽  
L. Gary Provost ◽  
Gary S. Tompa ◽  
Andrei Colibaba-Evulet ◽  
Nick G. Gulmac ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transparent Conducting Oxide ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Rotating Disk Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractOver the past 30 years, the need for transparent conducting oxide coatings has been met almost exclusively by tin doped indium-oxide. As the display market advances in complexity, the demand for alternative transparent materials exhibiting high conductivity and stability has become greater. In this paper, we discuss briefly the merits of using doped ZnO as a superior transparent conducting oxide. We report here our results in scaling our ZnO MOCVD reactor technology from 5° to 12° diameter susceptors. Using Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition, we have been able to obtain large area uniformity on multiple (14 cm × 9 cm) glass sheets per deposition run. Promising film characteristics suggest significant application in the field of flat panel displays and other optical systems may be possible.

In‐situ growth of yba2cu3o7‐x films by metal organic chemical vapor deposition using vertical, high‐speed rotating disk reactor.

1989 ◽  
Vol 169 ◽  
Author(s):  
D. W. Noh ◽  
B. Gallois ◽  
Y. Q. Li ◽  
C. Chern ◽  
B. Rear ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Axis Orientation ◽  
Rotating Disk Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSuperconducting thin films of YBa2Cu307‐x were grown on MgO (100) and YSZ(IOO) substrates without post‐annealing by metal organic chemical vapor deposition using vertical, high‐speed (1100 rpm) rotating disk reactor. The source materials were Y(tmhd)3, Ba(tmhd)2, and Cu(tmhd)2, which were kept at 135 °C, 240 °C, and 120 °C respectively. The precursors were transported using nitrogen as the carrier gas and introduced separately into the cylindrical stainless steel reaction chamber, which was maintained at 60 torr. The oxygen partial pressure was 30 Torr. The substrates were heated resistively at 800°C. After growth, the films were cooled down at a rate of 5 °C/min under 1 atmospheric pressure of pure oxygen. The X‐ray diffraction pattern of the films showed primarily an orientation of c‐axis perpendicular to the substrates, with weak peaks of (hoo) corresponding to a‐axis orientation. Scanning Electron Microscopy of the films showed a well‐developed a‐axis and c‐axis plate‐like structure which appeared as rectangular micron‐sized features on the MgO surface. On the YSZ substrates a‐axis and c‐axis plate‐like projections were also observed, with the dense plate‐like c‐axis orientation dominant. Four probe resistance measurements showed Tc(R=0) at 91.8 K(△TC=2.2 K) and 85 K (△TC=7 K) on YSZ and MgO substrates respectively.

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal-Organic Chemical Vapor Deposition Routes to Films of Transparent Conducting Oxides

1997 ◽  
Vol 495 ◽  
Author(s):  
A. Wang ◽  
S. C. Cheng ◽  
J. A. Belot ◽  
R. J. Mcneely ◽  
J. Cheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carrier Density ◽  
Chemical Vapor ◽  
Optical Transparency ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Electrical Conductivities ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTThis contribution reports the in situ growth of transparent, conducting GaxIn2-xO3 and ZnkIn2Ok+3 films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2 (dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 – 1.0 range is predominantly cubic with 25° C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2 × 1020 cm−3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range K = 0.16 – 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25° C) as high as 1000 S/cm (n-type; carrier density = 3.7 × 1020 cm−3, mobility = 18.6 cm2/Vs) for K = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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