Low leakage current in (Bi0.95La0.05)2NiMnO6 double-perovskite thin films prepared by chemical solution deposition

2014 ◽  
Vol 120 ◽  
pp. 23-25 ◽  
Author(s):  
Wan-peng Li ◽  
Qiu-xiang Liu ◽  
Xin-gui Tang ◽  
Ju-lan Lai ◽  
Yan-ping Jiang
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Chemical Solution Deposition ◽  
Double Perovskite ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Low Leakage ◽  
Low Leakage Current

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

scholarly journals Aqueous Chemical Solution Deposition of Functional Double Perovskite Epitaxial Thin Films

2020 ◽  
Vol 26 (42) ◽  
pp. 9338-9347 ◽  
Author(s):  
Hailin Wang ◽  
Carlos Frontera ◽  
Javier Herrero‐Martín ◽  
Alberto Pomar ◽  
Pere Roura ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Double Perovskite ◽  
Epitaxial Thin Films ◽  
Chemical Solution ◽  
Solution Deposition

Ferroelectric Properties Improvement of Mn-Doped 0.7BiFeO3-0.3BaTiO3 Thin Films Fabricated by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 159-162
Author(s):  
Yuya Ito ◽  
Makoto Moriya ◽  
Wataru Sakamoto ◽  
Toshinobu Yogo
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Electric Fields ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Homogeneous Surface

Ferroelectric 0.7BiFeO3-0.3BaTiO3 and 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films were prepared by the chemical solution deposition. Perovskite single-phase thin films with homogeneous surface morphology were successfully fabricated at 700°C on Pt/TiOx/SiO2/Si substrates. Although typical polarization (P)-electric field (E) hysteresis loops were observed for 0.7BiFeO3-0.3BaTiO3 thin films, their insulation resistance was relatively low at room temperature. Mn doping for Fe site of the 0.7BiFeO3-0.3BaTiO3 was very effective in improving leakage current properties. In 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films, the abrupt increase in leakage current was suppressed even at high electric fields, leading to the well-shaped P-E hysteresis loops at ambient temperatures. Remanent polarization and coercive field of the 0.7Bi (Fe0.95Mn0.05)O3-0.3Bi0.5Na0.5TiO3 films at room temperature were approximately 26 μC/cm2 and 130 kV/cm, respectively.

Effect of 3d Transition Metals Addition on the Ferroelectric Properties in Bi Ferrite Thin Films

2007 ◽  
Vol 1034 ◽  
Author(s):  
Hiroshi Naganuma ◽  
Jun Miura ◽  
Soichiro Okamura
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Leakage Current ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Diffraction Peaks ◽  
Ferrite Thin Films ◽  
Co Addition

AbstractCr, Mn, Co, Ni and Cu of 5 at % s added BiFeO3 films were fabricated by chemical solution deposition on 111-textured Pt/Ti/SiO2/Si(100) substrates. Only the diffraction peaks attributed to BiFeO3 structure could obtain except the Ni and Cr additions. The BiFeO3 films became almost amorphous by adding Ni, and non ferroelectric Bi7CrO12.5 phase was formed by adding Cr. AFM images indicated the surface morphology of the films was drastically changed by the additives. The leakage current was reduced by adding Mn, Cu and Co, although the electric coercive field increased in the case of Co addition. Therefore, it could be concluded that Mn and Cu additives improved not only the leakage current properties but also the ferroelectric properties in the course of CSD process. It should be noted that this is the first report showing the improvement of ferroelectricity of BiFeO3 films by adding Cu.

scholarly journals Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3Thin Films Prepared Using Chemical Solution Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Venkata Sreenivas Puli ◽  
Shiva Adireddy ◽  
Dhiren K. Pradhan ◽  
Ram S. Katiyar ◽  
Douglas B. Chrisey
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Data Storage ◽  
Crystalline Structure ◽  
Chemical Solution Deposition ◽  
Switching Behavior ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Practical Applications ◽  
Nanoscale Level

Nanoscale switchable ferroelectric (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD) spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+and Sn4+cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM) technique has been employed to acquire out-of-plane (OPP) piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

Leakage current behavior of La-doped Bi2Ti2O7 thin films by a chemical solution deposition method

2004 ◽  
Vol 58 (29) ◽  
pp. 3725-3728 ◽  
Author(s):  
Xuena Yang ◽  
Baibiao Huang ◽  
Hongbin Wang ◽  
Shuxia Shang ◽  
Weifeng Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Chemical Solution Deposition ◽  
Deposition Method ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
La Doped ◽  
Current Behavior
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