Modeling of Mach-Zehnder modulator using ferroelectric materials at 1.55 µm optical transmission

2021 ◽  
Vol 42 ◽  
pp. 1915-1920
Author(s):  
J. Hanan Mohammed ◽  
K. Firas Faeq Hussain ◽  
F. Muwafaq Jaddoa
Keyword(s):  
Optical Transmission ◽  
Ferroelectric Materials ◽  
Mach Zehnder Modulator

Application of a Novel Modulation Scheme of PS-RZ-QPSK Signal in High-Speed Optical Transmission System

2013 ◽  
Vol 347-350 ◽  
pp. 1879-1883
Author(s):  
Lei Xu ◽  
Jin Nan Zhang ◽  
Yan Gan Zhang ◽  
Mi Lin
Keyword(s):  
Phase Shift ◽  
High Speed ◽  
Optical Transmission ◽  
Modulation Scheme ◽  
Phase Shift Keying ◽  
Transmission Performance ◽  
Dual Polarization ◽  
Traditional Structure ◽  
Shift Keying ◽  
Mach Zehnder Modulator

Modulation principle of dual-polarization quadratu-re phase shift keying signal and polarization-switched QPSK signal are demonstrated and advantages of PS-QPSK are proved in theoretically. A novel modulation scheme of PS-RZ-QPSK signal is proposed in this paper. The scheme reduces transmitter cost by less use of Mach-Zehnder modulator, but also presents similar performance as traditional structure for PS-RZ-QPSK. The simulate result indicates PS-RZ-QPSK can achieve a better transmission performance than DP-RZ-QPSK at the same bit rate (84Gb/s) and baud rate (28GBd), and proves showing the feasibility of novel modulation scheme.

3D QAM-DPSK Optical Transmission Employing a Single Mach–Zehnder Modulator and Optical Direct Detection

2020 ◽  
Vol 38 (22) ◽  
pp. 6247-6256
Author(s):  
Hyoung Joon Park ◽  
In Ho Ha ◽  
Soo-Min Kang ◽  
Won-Ho Shin ◽  
Sang-Kook Han
Keyword(s):  
Optical Transmission ◽  
Direct Detection ◽  
Mach Zehnder Modulator

The Application of Optical Interferometry to the Study of Field-Induced Effects in Bulk and thin Film Ferroelectrics

1993 ◽  
Vol 310 ◽  
Author(s):  
Keith L Lewis ◽  
Kathleen F Dexter
Keyword(s):  
Thin Film ◽  
Optical Transmission ◽  
Three Dimensional ◽  
Ferroelectric Materials ◽  
Optical Interferometry ◽  
Dimensional Representation ◽  
Thin Sections ◽  
Three Dimensional Representation ◽  
Initial Work ◽  
Transmission Measurements

AbstractA study is reported of field-induced effects in ferroelectric materials using optical interferometry. One of the techniques used is based on the use of a WYKO TOPO3 system and provides a three dimensional representation of field-induced displacement. The information provided is supplemented by optical transmission measurements on thin sections of material fabricated to allow interference fringing to be seen. Initial work has centred on the characterisation of ceramic PLZT material. Both transverse and longitudinal electrode configurations have been studied and have highlighted the magnitude of the effects possible and the importance of electrostrictive processes in determining the direction of deformation. These can result in anomalously high strain gradients over distances of the order of 50-100µm. This behaviour is compared with that found for preliminary samples of thin film ferroelectric materials.

Electron Microscope study of commensurate-incommensurate phase transition in BaZnGeO4

1990 ◽  
Vol 48 (4) ◽  
pp. 172-173
Author(s):  
Naoki Yamamoto ◽  
Makoto Kikuchi ◽  
Tooru Atake ◽  
Akihiro Hamano ◽  
Yasutoshi Saito
Keyword(s):  
Phase Transition ◽  
Electron Microscope Study ◽  
Room Temperature ◽  
Hexagonal Lattice ◽  
Ferroelectric Materials ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Periodic Arrays ◽  
Modulation Wave Vector

BaZnGeO4 undergoes many phase transitions from I to V phase. The highest temperature phase I has a BaAl2O4 type structure with a hexagonal lattice. Recent X-ray diffraction study showed that the incommensurate (IC) lattice modulation appears along the c axis in the III and IV phases with a period of about 4c, and a commensurate (C) phase with a modulated period of 4c exists between the III and IV phases in the narrow temperature region (—58°C to —47°C on cooling), called the III' phase. The modulations in the IC phases are considered displacive type, but the detailed structures have not been studied. It is also not clear whether the modulation changes into periodic arrays of discommensurations (DC’s) near the III-III' and IV-V phase transition temperature as found in the ferroelectric materials such as Rb2ZnCl4.At room temperature (III phase) satellite reflections were seen around the fundamental reflections in a diffraction pattern (Fig.1) and they aligned along a certain direction deviated from the c* direction, which indicates that the modulation wave vector q tilts from the c* axis. The tilt angle is about 2 degree at room temperature and depends on temperature.

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

The need of electron microscopy in the study of domains and domain walls in ferroelectrics

1994 ◽  
Vol 52 ◽  
pp. 550-551
Author(s):  
Wenwu Cao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
High Mobility ◽  
Continuum Theory ◽  
Polarization Vector ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
Nonlocal Coupling ◽  
Cubic Symmetry ◽  
Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

APPLICATION OF FERROELECTRIC MATERIALS IN ELECTRICAL FILTERS

1972 ◽  
Vol 33 (C2) ◽  
pp. C2-33-C2-37
Author(s):  
M. de JONG
Keyword(s):  
Ferroelectric Materials

256 QAM Digital Coherent Optical Transmission Using Raman Amplifiers

2011 ◽  
Vol E94-B (2) ◽  
pp. 417-424 ◽  
Author(s):  
Masato YOSHIDA ◽  
Seiji OKAMOTO ◽  
Tatsunori OMIYA ◽  
Keisuke KASAI ◽  
Masataka NAKAZAWA
Keyword(s):  
Optical Transmission ◽  
Raman Amplifiers
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