Effect of finite temperature and external magnetic field on non-equilibrium transport in a single molecular transistor with quantum dissipation: Anderson-Holstein-Caldeira-Leggett model

We investigate in this paper measurement-induced disturbance (MID) and negativity in a two-spin-qutrit model by considering the influence of the external magnetic field, nonlinear coupling parameter, the uniaxial field and temperature. It is shown that all of these parameters play a significant role in negativity and MID. We make an explicit comparison between the negativity and MID and disclose some interesting results. By the way, we find that negativity is a better measure than MID to detect the sudden point in a finite temperature, which is obviously different from the previous findings.

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Shear viscosity of quark matter at finite temperature under an external magnetic field

Physical Review D ◽

10.1103/physrevd.87.114003 ◽

2013 ◽

Vol 87 (11) ◽

Cited By ~ 16

Author(s):

Seung-il Nam ◽

Chung-Wen Kao

Keyword(s):

Magnetic Field ◽

External Magnetic Field ◽

Shear Viscosity ◽

Quark Matter ◽

Finite Temperature

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Quantum transport in a single molecular transistor at finite temperature

Scientific Reports ◽

10.1038/s41598-021-89436-5 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Manasa Kalla ◽

Narasimha Raju Chebrolu ◽

Ashok Chatterjee

Keyword(s):

Quantum Dot ◽

Quantum Transport ◽

Central Region ◽

Finite Temperature ◽

Tunneling Current ◽

Differential Conductance ◽

Function Technique ◽

Quantum Dissipation ◽

Electron Phonon Interaction ◽

Molecular Transistor

AbstractWe study quantum transport in a single molecular transistor in which the central region consists of a single-level quantum dot and is connected to two metallic leads that act as a source and a drain respectively. The quantum dot is considered to be under the influence of electron–electron and electron–phonon interactions. The central region is placed on an insulating substrate that acts as a heat reservoir that interacts with the quantum dot phonon giving rise to a damping effect to the quantum dot. The electron–phonon interaction is decoupled by applying a canonical transformation and then the spectral density of the quantum dot is calculated from the resultant Hamiltonian by using Keldysh Green function technique. We also calculate the tunneling current density and differential conductance to study the effect of quantum dissipation, electron correlation and the lattice effects on quantum transport in a single molecular transistor at finite temperature.

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Quantum Transport in A Single Molecular Transistor at Finite Temperature

10.21203/rs.3.rs-112967/v1 ◽

2020 ◽

Author(s):

Manasa Kalla ◽

Narasimha Raju Chebrolu ◽

Ashok Chatterjee

Keyword(s):

Quantum Dot ◽

Quantum Transport ◽

Central Region ◽

Finite Temperature ◽

Tunneling Current ◽

Differential Conductance ◽

Function Technique ◽

Quantum Dissipation ◽

Electron Phonon Interaction ◽

Molecular Transistor

Abstract We study quantum transport in a single molecular transistor in which the central region consists of a single-level quantum dot and is connected to two metallic leads that act as a source and a drain respectively. The quantum dot is considered to be under the influence of electron-electron and electron-phonon interactions. The central region is placed on an insulating substrate that acts as a heat reservoir that interacts with the quantum dot phonon giving rise to a damping effect to the quantum dot. The electron-phonon interaction is decoupled by applying a canonical transformation and then the spectral density of the quantum dot is calculated from the resultant Hamiltonian by using Keldysh Green function technique. We also calculate the tunneling current density and differential conductance to study the effect of quantum dissipation, electron correlation and the lattice effects on quantum transport in a single molecular transistor at finite temperature.

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