Synthesis of GaSb-VDS thin film by electron beam physical vapour deposition and its electro-optical characterization as prerequisite for p-n device construction

Author(s):  
Anshul Gupta ◽  
Manisha Deshpande ◽  
Dattatray B. Gadkari ◽  
Dilip S. Maske
Polymer ◽  
1991 ◽  
Vol 32 (11) ◽  
pp. 2064-2069 ◽  
Author(s):  
Masao Tamada ◽  
Masaharu Asano ◽  
Masaru Yoshida ◽  
Minoru Kumakura

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Manish Kumar ◽  
Krishna Kumar Parashar ◽  
Sushil Kumar Tandi ◽  
Tanuj Kumar ◽  
D. C. Agarwal ◽  
...  

Ag:TiO2nanocomposite films have been synthesized by sol-gel method followed by electron beam physical vapour deposition. Targets for this deposition were prepared by a hydraulic press using a powder containing Ag and TiO2prepared by sol-gel technique. Microstructure, surface, and plasmonic properties of nanocomposite films were studied using glancing angle X-ray diffractometer, atomic force microscopy, field emission secondary electron microscopy, and UV-Vis spectroscopy. Microstructural study reveals that Ag nanoparticles are embedded in TiO2matrix consisting of mixed phases of anatase and rutile. Size estimation using Scherrer formula reveals that average crystallite size of Ag nanoparticles is 23 nm. Surface morphological studies indicate that deposited films are uniform and intact to the substrate and have very low value of root mean square roughness. Optical studies exhibit a surface plasmon resonance induced absorption band in visible region, which is the characteristic feature of Ag nanoparticles. The intensity of this absorption band is found to increase with the increase in deposition time. Multiple peaks observed in absorption band were explained using the concepts of extended Mie scattering. Preliminary experiments also suggested that these nanocomposite films exhibit promising photocatalytic properties, which can be used for water treatment.


2000 ◽  
Vol 32 (3) ◽  
pp. 361-368 ◽  
Author(s):  
Jochen Manara ◽  
Rainer Brandt ◽  
Joachim Kuhn ◽  
Jochen Fricke ◽  
Thomas Krell ◽  
...  

2012 ◽  
Vol 38 (4) ◽  
pp. 3317-3326 ◽  
Author(s):  
E. Roos ◽  
S.M. Naga ◽  
R.N. Richter ◽  
S. Lauf ◽  
M. Awaad ◽  
...  

2000 ◽  
Vol 125 (1-3) ◽  
pp. 331-334 ◽  
Author(s):  
E. Roos ◽  
K. Maile ◽  
A. Lyutovich ◽  
S. Lauf ◽  
H. Kockelmann ◽  
...  

2020 ◽  
Vol 2 (1) ◽  
pp. 30
Author(s):  
Miłosz Grodzicki

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).


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