How to boost the tin in your GeSn semiconductor alloys

2020 ◽  
Vol 39 ◽  
pp. 4
Author(s):  
David Bradley
Keyword(s):  
1994 ◽  
Vol 340 ◽  
Author(s):  
Bing-Lin Gu ◽  
Jing-Zhi Yu ◽  
Xiao Hu ◽  
Kaoru Ohno ◽  
Yoshiyuki Kawazoe

ABSTRACTA concentration wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deeper layers in III – V alloys. The ground state ordered structures of ternary III – V semiconductor alloys are deduced and a dynamic model is established.


2008 ◽  
Vol 77 (12) ◽  
Author(s):  
O. Pagès ◽  
A. V. Postnikov ◽  
M. Kassem ◽  
A. Chafi ◽  
A. Nassour ◽  
...  

1989 ◽  
Vol 39 (9) ◽  
pp. 6279-6282 ◽  
Author(s):  
Su-Huai Wei ◽  
Alex Zunger

2015 ◽  
Vol 73 (9) ◽  
pp. 886 ◽  
Author(s):  
Xinsheng Wang ◽  
Liming Xie ◽  
Jin Zhang

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