Preparation, Structure and Properties of Two-dimensional Semiconductor Alloys

[Cu(L)(AIP)·1.5H2O]n (1) [L= 3,5-di(benzimidazol-1-yl)pyridine, H2AIP= 5-aminoisophthalic acid] was prepared by the solvothermal reaction, which was characterized by single-crystal X–ray diffraction, infrared spectroscopy, and elemental analysis. 1 exhibits an infinite two dimensional [Cu(AIP)]n sheet parallel to (0 1 1) crystal plane. Furthermore, complex 1 displays good photocatalytic degradation of methyl blue (MB).

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Semiconductor Superlattices: Order and Disorder

MRS Proceedings ◽

10.1557/proc-93-153 ◽

1987 ◽

Vol 93 ◽

Cited By ~ 1

Author(s):

R. Hull ◽

J. E. Turner ◽

A. Fischer-Colbrie ◽

Alice E. Whitea ◽

K. T. Short ◽

...

Keyword(s):

Lattice Mismatch ◽

Strain Relaxation ◽

Multilayer Structures ◽

Two Dimensional ◽

Semiconductor Alloys ◽

Dislocation Generation ◽

Growth Interface ◽

Order And Disorder ◽

Metastable Structures ◽

Si Ion Implantation

ABSTRACTWe review and discuss the main structural phenomena inherent in epitaxial multilayer semiconductor growth: lattice mismatch, misfit dislocation generation, two-dimensional vs. threedimensional growth, interface abruptness and planarity and the local atomic structure of semiconductor alloys. The prevalence of metastable structures, often a function of crystal growth temperature, is discussed. We also investigate the effect of Si ion implantation and subsequent rapid thermal annealing of AlGaAs/GaAs and InGaAs/GaAs multilayer structures, with reference to strain relaxation, layer planarity and enhanced Al, In and Si diffusion.

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Anomalous phase transition behavior in hydrothermal grown layered tellurene

Nanoscale ◽

10.1039/c9nr06637c ◽

2019 ◽

Vol 11 (42) ◽

pp. 20245-20251

Author(s):

Han Li ◽

Kedi Wu ◽

Sijie Yang ◽

Tara Boland ◽

Bin Chen ◽

...

Keyword(s):

Phase Transition ◽

Van Der Waals ◽

Dimensional Structure ◽

Two Dimensional ◽

Structure And Properties ◽

Phase Transition Behavior ◽

One Dimensional ◽

Transition Behavior

Recent studies have demonstrated that tellurene is a van der Waals (vdW) two-dimensional material with potential optoelectronic and thermoelectric applications as a result of its pseudo-one-dimensional structure and properties.

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Structure and properties of a novel bimetallic praseodymium(III)-manganese(II) compound with a two-dimensional layer-like structure

Molecular Crystals and Liquid Crystals ◽

10.1080/15421406.2019.1655977 ◽

2019 ◽

Vol 682 (1) ◽

pp. 54-64

Author(s):

Wen-Tong Chen

Keyword(s):

Two Dimensional ◽

Structure And Properties

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Interface Cracks in Kirchhoff Anisotropic Thin Plates of Dissimilar Materials

Journal of Applied Mechanics ◽

10.1115/1.4023020 ◽

2013 ◽

Vol 80 (4) ◽

Cited By ~ 3

Author(s):

Xu Wang ◽

Peter Schiavone

Keyword(s):

Thin Plate ◽

Interfacial Crack ◽

Dissimilar Materials ◽

Thin Plates ◽

Two Dimensional ◽

Structure And Properties ◽

Intensity Factors ◽

Crack Tip Field ◽

Anisotropic Plates ◽

Appl Math

This paper investigates the problem of stretching and bending deformations of a Kirchhoff anisotropic thin plate composed of two dissimilar materials bonded along a straight interface containing a crack. Our analysis makes use of the Stroh octet formalism developed recently by Cheng and Reddy (Cheng and Reddy, 2002, “Octet Formalism for Kirchhoff Anisotropic Plates,” Proc. R. Soc. Lond., A458, pp. 1499–1517; Cheng and Reddy, 2003, “Green’s Functions for Infinite and Semi-Infinite Anisotropic Thin Plates,” ASME J. Appl. Mech., 70, pp. 260–267; Cheng and Reddy, 2004, “Laminated Anisotropic Thin Plate With an Elliptic Inhomogeneity,” Mech. Mater., 36, pp. 647–657; Cheng and Reddy, 2005, “Structure and Properties of the Fundamental Elastic Plate Matrix,” J. Appl. Math. Mech., 85, pp. 721–739) for Kirchhoff anisotropic plates. It is found that the interfacial crack-tip field consists of a pair of two-dimensional oscillatory singularities, which are explicitly determined. Two complex intensity factors are proposed to evaluate the two oscillatory singularities.

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Surface Phase Separation and Ordering in Compound Semiconductor Alloys

MRS Proceedings ◽

10.1557/proc-198-609 ◽

1990 ◽

Vol 198 ◽

Cited By ~ 7

Author(s):

T.L. Mcdevitt ◽

S. Mahajan ◽

D.E. Laughlin ◽

W.A. Bonner ◽

V.G. Keramidas

Keyword(s):

Phase Separation ◽

Growth Direction ◽

Orientation Dependence ◽

Layer Growth ◽

Two Dimensional ◽

Surface Phase ◽

Semiconductor Alloys ◽

Growth Plane ◽

Temperature And Growth ◽

Inp Substrates

ABSTRACTThe orientation dependence of phase separation has been examined in detail in InGaAsP layers grown by liquid phase epitaxy on (001), (110), (111)In and (123) InP substrates. It is shown that phase separation is two-dimensional in nature and does not occur along the growth direction for the cases examined. Further, phase separation takes place along the soft directions lying in the growth plane. These results very strongly suggest that phase separation evolves at the surface while the layer is growing.CuPt-type ordering characteristics of InGaAsP layers are presented. In addition, the Influence of growth temperature and growth rate on domain sizes have been investigated in GaInP2 layers. A model has been proposed to rationalize the formation of domains and involves steps present on the surface. Results suggest that ordering like phase separation occurs at the surface while the layers is being deposited. It is inferred that the two microstructural features evolve concomitantly at the surface during layer growth.

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