Experimental determination of frequency- and temperature-dependent electrical properties of water-saturated clays using spectral induced polarization and network analyzer technique

Measurement ◽  
2021 ◽  
pp. 110653
Author(s):  
Thierry Bore ◽  
Antoine Coperey ◽  
Norman Wagner ◽  
Partha Narayan Mishra ◽  
Alexander Scheuermann ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Experimental Determination ◽  
Induced Polarization ◽  
Network Analyzer ◽  
Temperature Dependent ◽  
Spectral Induced Polarization ◽  
Water Saturated

scholarly journals Bacterial Stern layer diffusion: experimental determination with spectral induced polarization and sensitivity to nitrite toxicity

2019 ◽  
Vol 17 (6) ◽  
pp. 623-635
Author(s):  
Adrian Mellage ◽  
Christina M. Smeaton ◽  
Alex Furman ◽  
Estella A. Atekwana ◽  
Fereidoun Rezanezhad ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Induced Polarization ◽  
Stern Layer ◽  
Spectral Induced Polarization ◽  
Nitrite Toxicity

Temperature Dependent Hall Measurements on CdGeAs2

1999 ◽  
Vol 607 ◽  
Author(s):  
A.J. Ptak ◽  
S. Jain ◽  
K.T Stevens ◽  
T.H. Myers ◽  
P.G. Schunemann ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Donor ◽  
Temperature Dependent ◽  
Out Of Plane ◽  
Background Doping ◽  
Apparent Variation ◽  
P Type ◽  
Matched Samples ◽  
Residual Growth

AbstractSeventeen samples of CdGeAs2 have been extensively characterized by temperature-dependent Hall effect and resistivity measurements. Due to the anisotropic nature of the electrical properties, carefully matched sample sets were fabricated with the c-axis either in or out of the plane of the sample. The matched samples allowed determination of carrier concentration and both in-plane and out-of-plane mobilities as a function of temperature. The electrical properties of both undoped and lightly doped samples were dominated by either native defects or residual growth impurities, leading to compensated p-type material. N-type doped material was obtained only with heavy doping. An apparent variation in acceptor activation energy between 110 and 165 meV could be best explained in terms of two deep acceptor levels and at least one shallow donor. Room temperature absorption coefficient data and the relation to background doping is also reported.

Sign in / Sign up

Export Citation Format

Share Document