Metallic air-bridges fabricated by multiple acceleration voltage electron beam lithography

2004 ◽  
Vol 75 (2) ◽  
pp. 210-215 ◽  
Author(s):  
T Borzenko ◽  
C Gould ◽  
G Schmidt ◽  
L.W Molenkamp
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Voltage Electron ◽  
Acceleration Voltage

3D nanofabrication using controlled-acceleration-voltage electron beam lithography with nanoimprinting technology

2019 ◽  
Vol 8 (3-4) ◽  
pp. 253-266
Author(s):  
Noriyuki Unno ◽  
Jun Taniguchi
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Low Cost ◽  
Three Dimensional ◽  
Surface Areas ◽  
Voltage Electron ◽  
3D Nanostructures ◽  
Wide Range ◽  
Lift Off ◽  
Acceleration Voltage

Abstract Nanostructures have unique characteristics, such as large specific surface areas, that provide a wide range of engineering applications, such as electronics, optics, biotics, and thermal and fluid dynamics. They can be used to downsize many engineering products; therefore, new nanofabrication techniques are strongly needed to meet this demand. A simple fabrication process with high throughput is necessary for low-cost nanostructures. In recent years, three-dimensional (3D) nanostructures have attracted much attention because they dramatically opened up new fields for applications. However, conventional techniques for fabricating 3D nanostructures contain many complex processes, such as multiple patterning lithography, metal deposition, lift-off, etching, and chemical-mechanical polishing. This paper focuses on controlled-acceleration-voltage electron beam lithography (CAV-EBL), which can fabricate 3D nanostructures in one shot. The applications of 3D nanostructures are introduced, and the conventional 3D patterning technique is compared with CAV-EBL and various 3D patterning techniques using CAV-EBL with nanoimprinting technology. Finally, the outlook for next-generation devices that can be fabricated by CAV-EBL is presented.

Low voltage electron beam lithography in self‐assembled ultrathin films with the scanning tunneling microscope

1994 ◽  
Vol 64 (3) ◽  
pp. 390-392 ◽  
Author(s):  
C. R. K. Marrian ◽  
F. K. Perkins ◽  
S. L. Brandow ◽  
T. S. Koloski ◽  
E. A. Dobisz ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ultrathin Films ◽  
Electron Beam Lithography ◽  
Scanning Tunneling Microscope ◽  
Low Voltage ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Voltage Electron ◽  
Self Assembled

Fabrication of bio-inspired 3D nanoimprint mold using acceleration-voltage-modulation electron-beam lithography

2019 ◽  
Vol 8 (3-4) ◽  
pp. 289-297 ◽  
Author(s):  
Kohei Goto ◽  
Jun Taniguchi
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Three Dimensional ◽  
Modulation Method ◽  
Imprint Lithography ◽  
3D Structures ◽  
Rose Petal ◽  
Rose Petals ◽  
Acceleration Voltage ◽  
Nano Imprint

Abstract Methods for fabricating micro- and nanoscale three-dimensional (3D) structures such as electron-beam lithography (EBL) attracted attention in various fields. In EBL, an acceleration-voltage modulation method can be used to control the developing depth of the structure. In this study, we fabricated a rose petal structure using acceleration-voltage modulation. Using a rose petal mold, plastic- and silver-duplicated rose petals were prepared using nano-imprint lithography (NIL). We demonstrated that various complex 3D structures and materials can be duplicated using NIL by applying an acceleration-voltage modulation method.

Optical Properties of InGaAs/InP Quantum Wires Defined by High Voltage Electron Beam Lithography at 200 kV

1992 ◽  
Vol 283 ◽  
Author(s):  
P. Ils ◽  
M. Michel ◽  
A. Forchel ◽  
I. Gyuro ◽  
P. Speier ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Quantum Wires ◽  
Optical Emission ◽  
Blue Shift ◽  
Ingaas Layer ◽  
Lithography Process ◽  
Voltage Electron ◽  
Side Walls ◽  
Wet Chemical

ABSTRACTWe have fabricated and analyzed high quality InGaAs/InP quantum wires by electron beam lithography and wet chemical etching. In order to optimize the shape of the wet-etched wires different wire orientations were investigated. As results of the lithography process we obtain wire masks with widths down to 15 nm and etched wires with widths of the InGaAs layer of 18 nm.The wires were studied optically by means of photoluminescence spectroscopy. In contrast to dry etched wire structures the wet chemically etched wires show strong optical emission even for geometrical widths less than 25 nm. The weak decrease of the quantum efficiency with decreasing wire width indicates that there are no dead layers at the side walls of the wires, which is in contrast to previous studies on dry-etched structures. The photoluminescence energy of the InGaAs/InP wires is independent of the wire dimension down to widths of 50 nm. This indicates that a steep lateral potential in our structures is obtained due to the confinement by the semiconductor/vacuum transition at the etched surfaces. For wires with smaller widths an increasing blue shift of photoluminescence energy up to more than 30 meV is observed.

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