Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer

2015 ◽  
Vol 147 ◽  
pp. 96-99 ◽  
Author(s):  
Hideyuki Hanawa ◽  
Yoshiki Satoh ◽  
Kazushige Horio
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
High K ◽  
Gan Hemts

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

2018 ◽  
Vol 27 (9) ◽  
pp. 097309 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Yang Xiao ◽  
Xiao-Hua Ma ◽  
Yi-Chuan Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer

2019 ◽  
Vol 114 (1) ◽  
pp. 013503 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Guo-Guo Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Mechanism of breakdown enhancement in AlGaN/GaN HEMTs using a high-k passivation layer

2016 ◽  
Author(s):  
ShengLei Zhao ◽  
XiaoJun Fu ◽  
Fan Liu ◽  
LunCai Liu ◽  
Jun Luo ◽  
...  
Keyword(s):  
Passivation Layer ◽  
High K ◽  
Gan Hemts

Analysis of Dependence of Breakdown Voltage on Gate–Drain Distance in AlGaN/GaN HEMTs With High-k Passivation Layer

2021 ◽  
Vol 68 (4) ◽  
pp. 1550-1556
Author(s):  
R. Tomita ◽  
S. Ueda ◽  
T. Kawada ◽  
H. Mitsuzono ◽  
K. Horio
Keyword(s):  
Breakdown Voltage ◽  
Passivation Layer ◽  
High K ◽  
Gan Hemts

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

2015 ◽  
Vol 46 (12) ◽  
pp. 1387-1391 ◽  
Author(s):  
Binola K. Jebalin ◽  
A. Shobha Rekh ◽  
P. Prajoon ◽  
N.Mohan Kumar ◽  
D. Nirmal
Keyword(s):  
Breakdown Voltage ◽  
Passivation Layer ◽  
High K ◽  
Gan Hemts

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-$k$ Passivation Layer

2014 ◽  
Vol 61 (3) ◽  
pp. 769-775 ◽  
Author(s):  
Hideyuki Hanawa ◽  
Hiraku Onodera ◽  
Atsushi Nakajima ◽  
Kazushige Horio
Keyword(s):  
Numerical Analysis ◽  
Breakdown Voltage ◽  
Passivation Layer ◽  
High K ◽  
Gan Hemts

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

scholarly journals Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

2021 ◽  
Vol 118 (7) ◽  
pp. 072103
Author(s):  
T. Liu ◽  
H. Watanabe ◽  
S. Nitta ◽  
J. Wang ◽  
G. Yu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gan Hemts ◽  
Mg Doped
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