Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-$k$ Passivation Layer

2014 ◽  
Vol 61 (3) ◽  
pp. 769-775 ◽  
Author(s):  
Hideyuki Hanawa ◽  
Hiraku Onodera ◽  
Atsushi Nakajima ◽  
Kazushige Horio
Keyword(s):  
Numerical Analysis ◽  
Breakdown Voltage ◽  
Passivation Layer ◽  
High K ◽  
Gan Hemts

Analysis of Dependence of Breakdown Voltage on Gate–Drain Distance in AlGaN/GaN HEMTs With High-k Passivation Layer

2021 ◽  
Vol 68 (4) ◽  
pp. 1550-1556
Author(s):  
R. Tomita ◽  
S. Ueda ◽  
T. Kawada ◽  
H. Mitsuzono ◽  
K. Horio
Keyword(s):  
Breakdown Voltage ◽  
Passivation Layer ◽  
High K ◽  
Gan Hemts

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

2015 ◽  
Vol 46 (12) ◽  
pp. 1387-1391 ◽  
Author(s):  
Binola K. Jebalin ◽  
A. Shobha Rekh ◽  
P. Prajoon ◽  
N.Mohan Kumar ◽  
D. Nirmal
Keyword(s):  
Breakdown Voltage ◽  
Passivation Layer ◽  
High K ◽  
Gan Hemts

Mechanism of breakdown enhancement in AlGaN/GaN HEMTs using a high-k passivation layer

2016 ◽  
Author(s):  
ShengLei Zhao ◽  
XiaoJun Fu ◽  
Fan Liu ◽  
LunCai Liu ◽  
Jun Luo ◽  
...  
Keyword(s):  
Passivation Layer ◽  
High K ◽  
Gan Hemts

Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO2 Passivation Layer

2007 ◽  
Author(s):  
Jiyong Lim ◽  
Young-Hwan Choi ◽  
In-Hwan Ji ◽  
Kyu-Heon Cho ◽  
Jihye Lee ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Breakdown Voltage ◽  
Passivation Layer ◽  
Gan Hemts

Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs

2010 ◽  
Vol 645-648 ◽  
pp. 1223-1226
Author(s):  
Ji Yong Lim ◽  
Young Hwan Choi ◽  
Young Shil Kim ◽  
Min Ki Kim ◽  
Min Koo Han
Keyword(s):  
Ion Implantation ◽  
Breakdown Voltage ◽  
Energy Optimization ◽  
Drain Current ◽  
Passivation Layer ◽  
Implantation Energy ◽  
Current Maximum ◽  
Gan Hemts ◽  
Conventional Device

We have fabricated SiO2 passivated AlGaN/GaN HEMTs and employed As+ ion implantation on the passivation layer and optimized the implantation energy. After As+ ion implantation with 120 keV energy and 1 × 1014 /cm2 dose, the maximum drain current, maximum transconductance and the breakdown voltage increased to 419.6 mA/mm, 87.9 mS/mm and 698 V while those of the conventional device was 317.0 mA/mm, 65.1 mS/mm and 639 V, respectively.

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