Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

scholarly journals Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 720
Author(s):  
He Guan ◽  
Shaoxi Wang
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Schottky Emission ◽  
Oxide Semiconductor ◽  
Optimized Design ◽  
Mos Capacitors ◽  
Leakage Mechanism ◽  
High K

Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler–Nordheim tunneling became the main leakage mechanism at high fields with reverse biased condition. The sample with HfO2 (4 m)/Al2O3 (8 nm) laminated dielectric shows a high barrier height ϕB of 1.66 eV at 30 °C which was extracted from the Schottky emission mechanism, and this can be explained by fewer In–O and As–O states on the interface, as detected by the X-ray photoelectron spectroscopy test. These effects result in HfO2 (4 m)/Al2O3 (8 nm)/n-InAlAs MOS-capacitors presenting a low leakage current density of below 1.8 × 10−7 A/cm2 from −3 to 0 V at 30 °C. It is demonstrated that the HfO2/Al2O3 laminated dielectric with a thicker Al2O3 film of 8 nm is an optimized design to be the high-k dielectric used in Au-Pt-Ti/HfO2-Al2O3/InAlAs MOS capacitor applications.

Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor

2012 ◽  
Vol 112 (3) ◽  
pp. 034514 ◽  
Author(s):  
Souvik Kundu ◽  
Nripendra N. Halder ◽  
D. Biswas ◽  
P. Banerji ◽  
T. Shripathi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Dielectric ◽  
Metal Oxide Semiconductor Capacitor

Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric

2016 ◽  
Vol 9 (12) ◽  
pp. 121002 ◽  
Author(s):  
Kexiong Zhang ◽  
Meiyong Liao ◽  
Masataka Imura ◽  
Toshihide Nabatame ◽  
Akihiko Ohi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Hysteresis ◽  
Metal Oxide Semiconductor Capacitor

scholarly journals Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3443
Author(s):  
Jinyu Lu ◽  
Gang He ◽  
Jin Yan ◽  
Zhenxiang Dai ◽  
Ganhong Zheng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Layer Deposition

In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm2O3/InP gate stacks have been investigated systematically. Based on X-ray photoelectron spectroscopy (XPS) measurements, it can be noted that ALD-derived Al2O3 interface passivation layer significantly prevents the appearance of substrate diffusion oxides and substantially optimizes gate dielectric performance. The leakage current experimental results confirm that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density than the other samples, reaching a value of 2.87 × 10−6 A/cm2. In addition, conductivity analysis shows that high-quality metal oxide semiconductor capacitors based on Sm2O3/Al2O3/InP gate stacks have the lowest interfacial density of states (Dit) value of 1.05 × 1013 cm−2 eV−1. The conduction mechanisms of the InP-based MOS capacitors at low temperatures are not yet known, and to further explore the electron transport in InP-based MOS capacitors with different stacked gate dielectric structures, we placed samples for leakage current measurements at low varying temperatures (77–227 K). Based on the measurement results, Sm2O3/Al2O3/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.

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