Improved Modeling of Flicker Noise Including Velocity Saturation Effect in FinFETs and Experimental Validation

Microelectronics Journal ◽

10.1016/j.mejo.2021.105020 ◽

2021 ◽

pp. 105020

Author(s):

Ravi Goel ◽

Weike Wang ◽

Yogesh Singh Chauhan

Keyword(s):

Experimental Validation ◽

Flicker Noise ◽

Saturation Effect ◽

Velocity Saturation

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Velocity saturation effect in heterostructure field effect transistors

10.1109/iedm.1989.74242 ◽

2003 ◽

Author(s):

C.J. Han ◽

P.P. Ruden ◽

T. Nohava ◽

D. Narum ◽

D. Grider ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Saturation Effect ◽

Velocity Saturation ◽

Heterostructure Field Effect Transistors

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Compact Modeling of Flicker Noise in High Voltage MOSFETs and Experimental Validation

2021 IEEE Latin America Electron Devices Conference (LAEDC) ◽

10.1109/laedc51812.2021.9437922 ◽

2021 ◽

Author(s):

Ravi Goel ◽

Yogesh Singh Chauhan

Keyword(s):

High Voltage ◽

Experimental Validation ◽

Flicker Noise ◽

Compact Modeling

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TA-A4 a simple analytical short-channel MOS model including the velocity saturation effect on the capacitance and channel current

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1978.19303 ◽

1978 ◽

Vol 25 (11) ◽

pp. 1345-1345 ◽

Author(s):

E. Sun ◽

J. Moll

Keyword(s):

Saturation Effect ◽

Short Channel ◽

Velocity Saturation ◽

Channel Current

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Velocity saturation effect on short-channel MOS transistor capacitance

IEEE Electron Device Letters ◽

10.1109/edl.1985.26066 ◽

1985 ◽

Vol 6 (3) ◽

pp. 120-122 ◽

Author(s):

H. Iwai ◽

M.R. Pinto ◽

C.S. Rafferty ◽

J.E. Oristian ◽

R.W. Dutton

Keyword(s):

Saturation Effect ◽

Short Channel ◽

Mos Transistor ◽

Velocity Saturation

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Base doping profile optimization including carriers velocity saturation effect

Proceedings 2007 IEEE SoutheastCon ◽

10.1109/secon.2007.342968 ◽

2007 ◽

Author(s):

Gagan Khanduri ◽

Brishbhan Panwar

Keyword(s):

Saturation Effect ◽

Doping Profile ◽

Velocity Saturation ◽

Profile Optimization ◽

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Modeling And Simulation Of Anomalous Degradation Of Subb-um NMOS's Current-driving Due To Velocity-saturation Effect

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724765 ◽

2005 ◽

Author(s):

K. Tsuneno ◽

H. Sato ◽

H. Masuda

Keyword(s):

Modeling And Simulation ◽

Saturation Effect ◽

Velocity Saturation

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Appendix: An atomistic model for the Landau potential and the origins of the saturation effect

Phase Transitions in Ferroelastic and Co-elastic Crystals ◽

10.1017/cbo9780511586460.017 ◽

1991 ◽

pp. 231-280

Keyword(s):

Saturation Effect ◽

Atomistic Model ◽

Landau Potential

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Experimental validation of the predicted TGR5 binding mode model

Zeitschrift für Gastroenterologie ◽

10.1055/s-0034-1397135 ◽

2015 ◽

Vol 53 (01) ◽

Author(s):

L Spomer ◽

CGW Gertzen ◽

D Häussinger ◽

H Gohlke ◽

V Keitel

Keyword(s):

Experimental Validation ◽

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Ephemeris Monitor for GBAS Using Multiple Baseline Antennas with Experimental Validation

Proceedings of the 30th International Technical Meeting of The Satellite Division of the Institute of Navigation (ION GNSS+ 2017) ◽

10.33012/2017.15380 ◽

2017 ◽

Author(s):

Samer Khanafseh ◽

Jaymin Patel ◽

Boris Pervan

Keyword(s):

Experimental Validation ◽

Multiple Baseline

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Experimental Validation of IMM Algorithm for Carrier Phase Tracking Through Interference

Proceedings of the 2020 International Technical Meeting of The Institute of Navigation ◽

10.33012/2020.17145 ◽

2020 ◽

Author(s):

Wengxiang Zhao ◽

Boris Pervan

Keyword(s):

Carrier Phase ◽

Experimental Validation ◽

Phase Tracking ◽

Carrier Phase Tracking

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