Base doping profile optimization including carriers velocity saturation effect

Proceedings 2007 IEEE SoutheastCon ◽

10.1109/secon.2007.342968 ◽

2007 ◽

Author(s):

Gagan Khanduri ◽

Brishbhan Panwar

Keyword(s):

Saturation Effect ◽

Doping Profile ◽

Velocity Saturation ◽

Profile Optimization ◽

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Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration

IEEE Transactions on Electron Devices ◽

10.1109/16.944202 ◽

2001 ◽

Vol 48 (9) ◽

pp. 2102-2107 ◽

Author(s):

K. Suzuki

Keyword(s):

Transit Time ◽

Doping Concentration ◽

Doping Profile ◽

Velocity Saturation ◽

Bandgap Narrowing ◽

Collector Junction ◽

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Transistor doping profile optimization for low power subthreshold circuits

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS) ◽

10.1109/mwscas.2014.6908345 ◽

2014 ◽

Author(s):

Munem M. Hossain ◽

Masud H. Chowdhury

Keyword(s):

Low Power ◽

Doping Profile ◽

Profile Optimization ◽

Subthreshold Circuits

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Velocity saturation effect in heterostructure field effect transistors

10.1109/iedm.1989.74242 ◽

2003 ◽

Author(s):

C.J. Han ◽

P.P. Ruden ◽

T. Nohava ◽

D. Narum ◽

D. Grider ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Saturation Effect ◽

Velocity Saturation ◽

Heterostructure Field Effect Transistors

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Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile

IEEE Technology Students' Symposium ◽

10.1109/techsym.2011.5783823 ◽

2011 ◽

Author(s):

S Chowdhury ◽

S Basu

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Analytical Modelling ◽

Doping Profile ◽

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Doping Profile Optimization for Power Devices Using Topology Optimization

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2854637 ◽

2018 ◽

Vol 65 (9) ◽

pp. 3869-3877

Author(s):

Katsuya Nomura ◽

Tsuguo Kondoh ◽

Tsuyoshi Ishikawa ◽

Shintaro Yamasaki ◽

Kentaro Yaji ◽

...

Keyword(s):

Topology Optimization ◽

Doping Profile ◽

Power Devices ◽

Profile Optimization

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Optimum base doping profile for minimum base transit time

IEEE Transactions on Electron Devices ◽

10.1109/16.83740 ◽

1991 ◽

Vol 38 (9) ◽

pp. 2128-2133 ◽

Author(s):

K. Suzuki

Keyword(s):

Transit Time ◽

Doping Profile ◽

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Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

10.1109/edms.1994.863875 ◽

2005 ◽

Author(s):

J.J. Liou ◽

C.S. Ho

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

High Current ◽

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Impact of base doping profile on stability characteristics of SiGe HBTs

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306132 ◽

2006 ◽

Author(s):

Ningyue Jiang ◽

Zhenqiang Ma

Keyword(s):

Doping Profile ◽

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Doping profile optimization in silicon permeable base transistors for high-frequency, high-voltage operation

10.1109/cornel.1989.79834 ◽

2003 ◽

Author(s):

D.D. Rathman ◽

M.A. Hollis ◽

R.A. Murphy ◽

A.L. McWhorter ◽

M.J. McNamara

Keyword(s):

High Voltage ◽

High Frequency ◽

Doping Profile ◽

Profile Optimization

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Determination of the fitting parameters for using uniform emitter and base doping profile in bipolar transistor modeling

Solid-State Electronics ◽

10.1016/0038-1101(94)90124-4 ◽

1994 ◽

Vol 37 (1) ◽

pp. 183-186 ◽

Author(s):

J.J. Liou ◽

C.S. Ho ◽

A. Kager

Keyword(s):

Bipolar Transistor ◽

Doping Profile ◽

Fitting Parameters ◽

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