Novel method for producing high H2 permeability Pd membranes with a thin layer of the sulfur tolerant Pd/Cu fcc phase

2011 ◽  
Vol 370 (1-2) ◽  
pp. 97-108 ◽  
Author(s):  
Natalie Pomerantz ◽  
Yi Hua Ma
1982 ◽  
Vol 4 (4) ◽  
pp. 328
Author(s):  
N.T. Lappas ◽  
L.C. Shugart ◽  
A.B. DeAngelo ◽  
T.L. Stockham
Keyword(s):  

1963 ◽  
Vol 41 (6) ◽  
pp. 1535-1539 ◽  
Author(s):  
Ishwar C. Nigam ◽  
M. Sahasrabudhe ◽  
Leo Levi

Gas liquid and thin layer chromatography have been combined into a single microphysicochemical technique. The resolution of two terpenoids found in nature—piperitone and piperitone oxide—is described to illustrate the scope of the novel method of analysis. Occurrence of the epoxide in Mentha arvensis (Japanese mint), Mentha piperita (Mitcham peppermint), Eucalyptus dives Schauer, "Type" ("broad-leaved peppermint"), and Eucalyptus numerosa Maiden, var. "A" is reported for the first time. Its presence in these species should prove of biochemical as well as taxonomic interest.


2006 ◽  
Vol 139 (4) ◽  
pp. 663-670 ◽  
Author(s):  
Masahiro Furutani ◽  
Toshiki Itoh ◽  
Takeshi Ijuin ◽  
Kazuya Tsujita ◽  
Tadaomi Takenawa

Author(s):  
William J. Baxter

In this form of electron microscopy, photoelectrons emitted from a metal by ultraviolet radiation are accelerated and imaged onto a fluorescent screen by conventional electron optics. image contrast is determined by spatial variations in the intensity of the photoemission. The dominant source of contrast is due to changes in the photoelectric work function, between surfaces of different crystalline orientation, or different chemical composition. Topographical variations produce a relatively weak contrast due to shadowing and edge effects.Since the photoelectrons originate from the surface layers (e.g. ∼5-10 nm for metals), photoelectron microscopy is surface sensitive. Thus to see the microstructure of a metal the thin layer (∼3 nm) of surface oxide must be removed, either by ion bombardment or by thermal decomposition in the vacuum of the microscope.


Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.


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