Effect of short circuit aging on safe operating area of SiC MOSFET

2018 ◽  
Vol 88-90 ◽  
pp. 645-651 ◽  
Author(s):  
Tien Anh Nguyen ◽  
Stéphane Lefebvre ◽  
Stéphane Azzopardi
Keyword(s):  
Short Circuit ◽  
Circuit Aging ◽  
Safe Operating

Gate oxide degradation of SiC MOSFET under short-circuit aging tests

2016 ◽  
Vol 64 ◽  
pp. 415-418 ◽  
Author(s):  
S. Mbarek ◽  
F. Fouquet ◽  
P. Dherbecourt ◽  
M. Masmoudi ◽  
O. Latry
Keyword(s):  
Short Circuit ◽  
Gate Oxide ◽  
Oxide Degradation ◽  
Circuit Aging

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA

2012 ◽  
Vol 717-720 ◽  
pp. 1045-1048 ◽  
Author(s):  
Woong Je Sung ◽  
B.J. Baliga ◽  
Alex Q. Huang
Keyword(s):  
Power Distribution ◽  
Distribution Systems ◽  
Voltage Drop ◽  
Short Circuit ◽  
Fault Isolation ◽  
Power Distribution Systems ◽  
Trade Off ◽  
Forward Voltage Drop ◽  
Isolation Device ◽  
Safe Operating

This paper aims to introduce a solid-state fault isolation device (FID) for the short circuit protection application in the power distribution systems. The key performance of a FID is to have a low on-state loss and a strong short circuit safe operating area (SCSOA). As a FID, a novel 15kV 4H-SiC field controlled diode (FCD) with a p+buried layer is proposed to provide an improved trade-off between the on-state forward voltage drop and the saturation current. Dynamic response to the fault and the application example of the proposed FCD are described in this paper.

Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs

1991 ◽  
Vol 38 (2) ◽  
pp. 303-309 ◽  
Author(s):  
N. Iwamuro ◽  
A. Okamoto ◽  
S. Tagami ◽  
H. Motoyama
Keyword(s):  
Numerical Analysis ◽  
Short Circuit ◽  
Safe Operating

Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests

2018 ◽  
Vol 88-90 ◽  
pp. 219-224 ◽  
Author(s):  
Shawki Douzi ◽  
Moncef Kadi ◽  
Habib Boulzazen ◽  
Mohamed Tlig ◽  
Jaleleddine Ben Hadj Slama
Keyword(s):  
Short Circuit ◽  
Buck Converter ◽  
Circuit Aging ◽  
Conducted Emi

Short-circuit safe operating area of superjunction MOSFETs

2016 ◽  
Author(s):  
Martin Pfost ◽  
Christian Unger ◽  
Gabriel Cretu ◽  
Marius Cenusa ◽  
Kevni Buyuktas ◽  
...  
Keyword(s):  
Short Circuit ◽  
Safe Operating

scholarly journals Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

2018 ◽  
Vol 33 (2) ◽  
pp. 1075-1086 ◽  
Author(s):  
Yuxiang Chen ◽  
Wuhua Li ◽  
Francesco Iannuzzo ◽  
Haoze Luo ◽  
Xiangning He ◽  
...  
Keyword(s):  
High Power ◽  
Failure Modes ◽  
Short Circuit ◽  
Three Dimensional ◽  
Igbt Modules ◽  
Safe Operating

Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits

2016 ◽  
Vol 856 ◽  
pp. 362-367 ◽  
Author(s):  
Georgios E. Kampitsis ◽  
Stavros A. Papathanassiou ◽  
Stefanos N. Manias
Keyword(s):  
Short Circuit ◽  
Three Dimensional ◽  
Thermal Characterization ◽  
Element Analysis ◽  
Power Mosfets ◽  
Dimensional Finite Element ◽  
Short Circuits ◽  
Three Dimensional Finite Element ◽  
Safe Operating

In this paper, the performance of silicon (Si) and silicon carbide (SiC) power MOSFETs during short circuits is investigated. The response of both semiconductors is examined under hard switch fault and fault under load conditions using a short circuit tester board. In addition, their failure mechanism is recorded and analyzed. Examination results show that the SiC MOSFET fails in the energy limiting mode, due to gate oxide rupture, while the Si MOSFET is destructed during the power limiting mode, at the beginning of the fault. The electro-thermal characterization of these devices is performed through three-dimensional finite element analysis, utilizing the experimentally extracted power dissipation for each transistor. Simulation results confirm the exceptional ruggedness that SiC power MOSFETs exhibit outside their safe operating area.

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