scholarly journals Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

2018 ◽  
Vol 33 (2) ◽  
pp. 1075-1086 ◽  
Author(s):  
Yuxiang Chen ◽  
Wuhua Li ◽  
Francesco Iannuzzo ◽  
Haoze Luo ◽  
Xiangning He ◽  
...  
Keyword(s):  
High Power ◽  
Failure Modes ◽  
Short Circuit ◽  
Three Dimensional ◽  
Igbt Modules ◽  
Safe Operating

Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits

2016 ◽  
Vol 856 ◽  
pp. 362-367 ◽  
Author(s):  
Georgios E. Kampitsis ◽  
Stavros A. Papathanassiou ◽  
Stefanos N. Manias
Keyword(s):  
Short Circuit ◽  
Three Dimensional ◽  
Thermal Characterization ◽  
Element Analysis ◽  
Power Mosfets ◽  
Dimensional Finite Element ◽  
Short Circuits ◽  
Three Dimensional Finite Element ◽  
Safe Operating

In this paper, the performance of silicon (Si) and silicon carbide (SiC) power MOSFETs during short circuits is investigated. The response of both semiconductors is examined under hard switch fault and fault under load conditions using a short circuit tester board. In addition, their failure mechanism is recorded and analyzed. Examination results show that the SiC MOSFET fails in the energy limiting mode, due to gate oxide rupture, while the Si MOSFET is destructed during the power limiting mode, at the beginning of the fault. The electro-thermal characterization of these devices is performed through three-dimensional finite element analysis, utilizing the experimentally extracted power dissipation for each transistor. Simulation results confirm the exceptional ruggedness that SiC power MOSFETs exhibit outside their safe operating area.

scholarly journals Determination of the Leakage Reactance of End Windings of a High-Power Synchronous Generator Stator Winding Using the Finite Element Method

Energies ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 7091
Author(s):  
Sebastian Berhausen ◽  
Stefan Paszek
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
High Power ◽  
Short Circuit ◽  
Three Dimensional ◽  
Synchronous Generator ◽  
The Finite Element Method ◽  
Synchronous Generators ◽  
Calculation Results ◽  
Element Method

The paper presents a description of the method and the results of calculating the leakage reactance of high-power synchronous generator end windings using the finite element method. This reactance is one of the components of the stator leakage reactance of synchronous generators. The calculations were carried out under the assumption of a three-dimensional field distribution in a synchronous generator. The thus calculated value of the leakage reactance of the end windings was compared with the calculation results obtained using traditional, analytical formulas known from the literature. The analysis of the influence of the reactance value of the end windings on the transient waveforms at a three-phase short-circuit of the stator windings was performed based on a two-dimensional field-circuit model.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Phonetic iconicity in the evaluative morphology of a sample of Indo-European, Niger-Congo and Austronesian languages

2010 ◽  
Vol 3 (2) ◽  
pp. 156-180 ◽  
Author(s):  
Renáta Gregová ◽  
Lívia Körtvélyessy ◽  
Július Zimmermann
Keyword(s):  
Three Dimensional ◽  
Sound Symbolism ◽  
Three Dimensional Model ◽  
Austronesian Languages ◽  
Place Of Articulation ◽  
European Languages ◽  
Phonetic Symbolism ◽  
The Individual ◽  
Core Vocabulary

Universals Archive (Universal #1926) indicates a universal tendency for sound symbolism in reference to the expression of diminutives and augmentatives. The research ( Štekauer et al. 2009 ) carried out on European languages has not proved the tendency at all. Therefore, our research was extended to cover three language families – Indo-European, Niger-Congo and Austronesian. A three-step analysis examining different aspects of phonetic symbolism was carried out on a core vocabulary of 35 lexical items. A research sample was selected out of 60 languages. The evaluative markers were analyzed according to both phonetic classification of vowels and consonants and Ultan's and Niewenhuis' conclusions on the dominance of palatal and post-alveolar consonants in diminutive markers. Finally, the data obtained in our sample languages was evaluated by means of a three-dimensional model illustrating the place of articulation of the individual segments.

scholarly journals Compressive behaviours of octet-truss lattices

2020 ◽  
Vol 234 (16) ◽  
pp. 3257-3269 ◽  
Author(s):  
Yifan Li ◽  
Huaiyuan Gu ◽  
Martyn Pavier ◽  
Harry Coules
Keyword(s):  
Failure Modes ◽  
Density Ratio ◽  
Three Dimensional ◽  
Compressive Load ◽  
High Strength ◽  
Detailed Comparison ◽  
Compressive Response ◽  
Beam Elements ◽  
Structural Applications ◽  
Octet Truss

Octet-truss lattice structures can be used for lightweight structural applications due to their high strength-to-density ratio. In this research, octet-truss lattice specimens were fabricated by stereolithography additive manufacturing with a photopolymer resin. The mechanical properties of this structure have been examined in three orthogonal orientations under the compressive load. Detailed comparison and description were carried out on deformation mechanisms and failure modes in different lattice orientations. Finite element models using both beam elements and three-dimensional solid elements were used to simulate the compressive response of this structure. Both the load reaction and collapse modes obtained in simulations were compared with test results. Our results indicate that three-dimensional continuum element models are required to accurately capture the behaviour of real trusses, taking into account the effects of finite-sized beams and joints.

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