2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications

TOTAL DOCUMENTS

134

(FIVE YEARS 0)

H-INDEX

12

(FIVE YEARS 0)

Published By IEEE

9781467387705

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Towards vertical power device 3D packaging on 8-inch wafer

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520796 ◽

2016 ◽

Author(s):

Bastien Letowski ◽

Julie Widiez ◽

Marc Rabarot ◽

William Vandendaele ◽

Bruno Imbert ◽

...

Keyword(s):

Power Device ◽

Download Full-text

Accumulation mode triple gate SOI LDMOS with ultralow on-resistance and enhanced transconductance

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520805 ◽

2016 ◽

Author(s):

Jie Wei ◽

Xiaorong Luo ◽

Da Ma ◽

Junfeng Wu ◽

Zhaoji Li ◽

...

Keyword(s):

Accumulation Mode

Download Full-text

RCDC-IGBT study for low-voltage applications

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520849 ◽

2016 ◽

Author(s):

J. G. Laven ◽

R. Baburske ◽

A. Philippou ◽

H. Itani ◽

M. Dainese

Keyword(s):

Download Full-text

Integrated SOI gate driver for 1200V SiC-FET switches

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520874 ◽

2016 ◽

Author(s):

Bastian Vogler ◽

Reinhard Herzer ◽

Iyead Mayya ◽

Sven Buetow

Keyword(s):

Download Full-text

Impact of integrated photonic-ohmic drain on static and dynamic characteristics of GaN-on-Si heterojunction power transistors

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520770 ◽

2016 ◽

Author(s):

Xi Tang ◽

Baikui Li ◽

Hanxing Wang ◽

Jin Wei ◽

Gaofei Tang ◽

...

Keyword(s):

Dynamic Characteristics ◽

Static And Dynamic Characteristics ◽

Power Transistors ◽

Download Full-text

Optimizing the trade-off between the RDS(on) of power MOSFETs and linear mode perfomance by local modification of MOSFET gain

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520857 ◽

2016 ◽

Author(s):

Mo-Huai Chang ◽

Phil Rutter

Keyword(s):

Trade Off ◽

Power Mosfets ◽

Linear Mode ◽

Local Modification

Download Full-text

A new concept of a high-current power module allowing paralleling of many SiC devices assembled exploiting conventional packaging technologies

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520879 ◽

2016 ◽

Author(s):

Slavo Kicin ◽

Felix Traub ◽

Samuel Hartmann ◽

Enea Bianda ◽

Christof Bernhard ◽

...

Keyword(s):

High Current ◽

Download Full-text

Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520772 ◽

2016 ◽

Author(s):

Toru Hiyoshi ◽

Kosuke Uchida ◽

Mitsuhiko Sakai ◽

Masaki Furumai ◽

Takashi Tsuno ◽

...

Keyword(s):

Stress Conditions ◽

Oxide Reliability

Download Full-text

Threshold voltage modulation by interface charge engineering for high performance normally-off GaN MOSFETs with high faulty turn-on immunity

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520784 ◽

2016 ◽

Author(s):

Qi Zhou ◽

Anbang Zhang ◽

R. Zhu ◽

Y. Shi ◽

Z. Wang ◽

...

Keyword(s):

Threshold Voltage ◽

High Performance ◽

Turn On ◽

Interface Charge

Download Full-text

Material evaluation and development support project for high current SiC power module

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520795 ◽

2016 ◽

Author(s):

Tomohiro Iguchi ◽

Akio Takahashi ◽

Hitoshi Habuka

Keyword(s):

High Current ◽

Power Module ◽

Material Evaluation ◽

Development Support

Download Full-text