Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature

2020 ◽  
Vol 114 ◽  
pp. 113783
Author(s):  
Junjun Zhang ◽  
Fanyu Liu ◽  
Bo Li ◽  
Binhong Li ◽  
Yang Huang ◽  
...  
Keyword(s):  
Single Event Upset ◽  
Single Event ◽  
Channel Size ◽  
Technology Effects ◽  
Soi Technology

SEU (Single Event Upset) Vulnerability of the Zilog Z-80 and NSC-800 Microprocessors,

1986 ◽  
Author(s):  
R. Koga ◽  
W. A. Kolasinski ◽  
C. King ◽  
J. Cusick
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Single Event Upset ◽  
Single Event

Single Event Upset Evaluation for a 28-nm FDSOI SRAM Type Buffer in an ARM Processor

2021 ◽  
Author(s):  
Shuting Shi ◽  
Rui Chen ◽  
Rui Liu ◽  
Mo Chen ◽  
Chen Shen ◽  
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Keyword(s):  
Single Event Upset ◽  
Single Event ◽  
Arm Processor ◽  
28 Nm

Impact of heavy ion energy and species on single-event upset in commercial floating gate cells

2021 ◽  
Vol 120 ◽  
pp. 114128
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Peng-Fei Zhai ◽  
Li Cai ◽  
Tao Liu ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Floating Gate ◽  
Single Event Upset ◽  
Single Event ◽  
Ion Energy
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