Temperature dependence of FT-IR absorption and Raman scattering of copper phthalocyanine thin layers deposited on silicon substrate

2006 ◽  
Vol 782 (2-3) ◽  
pp. 177-182 ◽  
Author(s):  
W. Bała ◽  
A. Grodzicki ◽  
P. Piszczek ◽  
M. Wojdyła ◽  
A. Bratkowski ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Silicon Substrate ◽  
Copper Phthalocyanine ◽  
Thin Layers ◽  
Ir Absorption ◽  
Ft Ir

scholarly journals Characterization of Copper Phthalocyanine-Tetrasulfonic Acid Tetrasodium Salt /Graphene Oxide

2021 ◽  
pp. 1893-1900
Author(s):  
Mayada Waheed Kazem ◽  
Raed Kamel Jalal
Keyword(s):  
Graphene Oxide ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Copper Phthalocyanine ◽  
Chemical Compounds ◽  
Ir Absorption ◽  
Mixing Ratios ◽  
Coating Method ◽  
Ft Ir

In this paper, the pure graphene oxide and copper phthalocyanine-tetrasolfonic acid tetrasodium salt were used to prepare thin films by using the spin coating method. These chemical compounds have remarkable optical properties and are chemically used in the development of device sensors by increasing the mixing ratio. Three different mixing ratios were prepared at room temperature and 150oC annealing temperature for three hours. The spectra of UV-VIS-IR absorption, photoluminescence, and Fourier-transformed infrared (FT-IR) were studied.

Temperature dependence of Raman scattering from 4H-SiC with hexagonal defects

2011 ◽  
Vol 99 (1) ◽  
pp. 011912 ◽  
Author(s):  
R. Han ◽  
B. Han ◽  
D. H. Wang ◽  
C. Li
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence

Temperature dependence of overtone intensity in raman scattering by liquids

1967 ◽  
Vol 10 (5) ◽  
pp. 41-44
Author(s):  
L. S. Stal'makhova ◽  
N. K. Sidorov ◽  
V. I. Kuryshin
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence

Temperature dependence of Raman scattering and anharmonic properties in LiNbO $$_3$$ 3

2014 ◽  
Vol 117 (3) ◽  
pp. 1147-1152 ◽  
Author(s):  
Ninel Kokanyan ◽  
David Chapron ◽  
Marc D. Fontana
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence

Temperature dependence of Raman scattering and anharmonicity study ofMgF2

1999 ◽  
Vol 59 (2) ◽  
pp. 775-782 ◽  
Author(s):  
A. Perakis ◽  
E. Sarantopoulou ◽  
Y. S. Raptis ◽  
C. Raptis
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence

scholarly journals IR ABSORPTION AND RAMAN SCATTERING OF WATER IN PHOSPHATE GLASSES: SIMILARITY AND DIFFERENCES

2002 ◽  
Vol 13 (0) ◽  
pp. 235-238
Author(s):  
TATIANA SMIRNOVA ◽  
VAVIK TER-NERSESYANTS ◽  
MARINA PESTRIKOVA
Keyword(s):  
Raman Scattering ◽  
Phosphate Glasses ◽  
Ir Absorption

Study of anharmonicity in pure and doped InSe by Raman scattering

2018 ◽  
Vol 32 (30) ◽  
pp. 1850340 ◽  
Author(s):  
Mahmoud Zolfaghari
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Temperature Variation ◽  
Optical Phonon ◽  
Line Center ◽  
Anharmonic Effect ◽  
Layered Semiconductor ◽  
Center Shift ◽  
Raman Modes ◽  
Quartic Anharmonicity

With the help of temperature dependence, Raman scattering anharmonic effect of various modes of layered semiconductor InSe over temperature range of 20–650 K has been studied. It was found that with an increase in temperature, anharmonicity will increase. Two and three phonons coupling with optical phonon, are used to describe temperature-induced anharmonicity in the linewidth of Raman modes. It was found that the temperature variation of the phonon parameter can be accounted for well by the cubic term in anharmonic model. To describe line-center shift of Raman modes, a model not considering independently cubic and quartic anharmonicity was used. A similar study has been done for InSe doped with different concentration of GaS dopant. The result of temperature study of InSe doped with GaS revealed that in this case anharmonicity increases with an increase in dopant and an increase in temperature.

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