Study of Alq3 thermal evaporation rate effects on the OLED

AbstractThe present work deals with investigation of the initial stages of growth of (Bi, Bi-Sb) films deposited by the methods of different degrees of nonequilibrium, such as thermal evaporation (TE) and self-ion assisted deposition (SIAD). The comparative analysis of growth mechanisms and film island evolution (faceting and coalescence) was carried out depending on the type (crystalline, amorphous) and temperature of substrate, evaporation rate, film composition, etc. Ion bombardment during deposition leads to films of higher density and reduced porosity, and greater stability than those deposited without bombardment. As compared with the pure Bi films the facetted island morphology of the SIAD Bi–Sb (20%) films is not so clear. This is explained by partial realization of the coalescence process by the liquid fluidity mechanism. At all substrate temperatures the grain orientation (111) R is more pronounced for SIAD films than for the TE films.

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Effect of thermal evaporation rate on the basic physical properties of glassy (As2S3) x (As2Se3)1−x films

Inorganic Materials ◽

10.1134/s0020168507010189 ◽

2007 ◽

Vol 43 (1) ◽

pp. 90-93

Author(s):

T. I. Goglidze ◽

I. V. Dement’ev ◽

V. M. Ishimov ◽

E. A. Senokosov

Keyword(s):

Physical Properties ◽

Evaporation Rate ◽

Thermal Evaporation

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Hole Formation in Gold Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100095807 ◽

1972 ◽

Vol 30 ◽

pp. 510-511

Author(s):

R. W. Vook ◽

R. Cook ◽

R. Ziemer

Keyword(s):

Deposition Rate ◽

Quartz Crystal ◽

Evaporation Rate ◽

Gold Films ◽

Hole Density ◽

Hole Formation ◽

Microscope Slide ◽

Crystal Film ◽

Glass Microscope Slide ◽

Glass Microscope

During recent experiments on Au films, a qualitative correlation between hole formation and deposition rate was observed. These early studies were concerned with films 80 to 1000A thick deposited on glass at -185°C and annealed at 170°C. In the present studies this earlier work was made quantitative. Deposition rates varying between 5 and 700 A/min were used. The effects of deposition rate on hole density for two films 300 and 700A thick were investigated.Au was evaporated from an outgassed W filament located 10 cm from a glass microscope slide substrate and a quartz crystal film thickness monitor. A shutter separating the filament from the substrate and monitor made it possible to obtain a constant evaporation rate before initiating deposition. The pressure was reduced to less than 1 x 10-6 torr prior to cooling the substrate with liquid nitrogen. The substrate was cooled in 15 minutes during which the pressure continued to drop to the mid 10-7 torr range, where deposition was begun.

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Microstructural changes of Aluminum Nitride after laser irradiation and electroless copper deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170918 ◽

1994 ◽

Vol 52 ◽

pp. 636-637

Author(s):

S. Cao ◽

A. J. Pedraza ◽

L. F. Allard

Keyword(s):

Aluminum Nitride ◽

Laser Irradiation ◽

Electroless Deposition ◽

Thermal Evaporation ◽

Surface Region ◽

Near Surface ◽

Laser Patterning ◽

Electroless Copper ◽

Excimer Laser Irradiation ◽

Laser Effect

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.

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